SQD50P04-09L 40V Automotive P-Channel Power MOSFET

Introduction

The Vishay Semiconductors SQD50P04-09L is an automotive-qualified P-channel power MOSFET based on TrenchFET technology. It is designed for power-distribution and industrial power-control roles where a high-current P-channel device is needed within a 40 V drain-source-voltage class. Its combination of AEC-Q101 qualification, low specified on-resistance, and -50 A continuous drain-current rating makes it relevant to compact high-side switching and power-path designs.

What it does

The SQD50P04-09L controls power through a P-channel MOSFET structure, with a maximum drain-source voltage rating of -40 V and a gate-source voltage limit of ±20 V. It supports continuous drain current up to -50 A at a specified case temperature of +25°C or +125°C, with a pulsed drain-current rating of -200 A.

For conduction-loss-sensitive designs, the device specifies drain-source on-resistance of 0.012 Ω typical and 0.019 Ω maximum when driven with a -4.5 V gate-source voltage at -14 A drain current. Maximum power dissipation is stated as 136 W at a +25°C case temperature, reducing to 45 W at +125°C.

The MOSFET operates across a -55°C to +175°C junction and storage temperature range. It is AEC-Q101 qualified, RoHS compliant, halogen-free according to the IEC 61249-2-21 definition, and subject to 100% Rg and UIS testing.

Applications

Potential uses that follow from its voltage, current, and qualification characteristics include:

• Automotive high-side power switching
• Automotive power-distribution paths
• Reverse-polarity or power-path control circuits
• Industrial DC power-control stages
• High-current load switching within -40 V drain-source-voltage limits

Design considerations

A P-channel MOSFET requires appropriate gate-drive polarity: the specified on-resistance condition uses a -4.5 V gate-source voltage, while the absolute gate-source limit is ±20 V. Designers should ensure that switching transients do not exceed this gate-source rating.

The device’s gate characteristics should also be considered in switching applications. Input capacitance is specified at 5339 pF typical, while total gate charge is 103 nC typical under the stated test conditions. These values affect the required gate-drive capability, switching-edge timing, and associated switching losses.

Thermal design remains important at high current. Although the device has a 136 W maximum power-dissipation rating at a +25°C case temperature, that rating falls to 45 W at +125°C. The intended mechanical and thermal implementation should therefore be verified against the datasheet and the conditions of the final application.

Availability and further information

The Mouser Electronics source link and the datasheet link on this page provide further technical details, including test conditions, electrical characteristics, and integration guidance for the SQD50P04-09L.