NVMTS1D1N08X N-Channel Power MOSFET

Introduction

The onsemi NVMTS1D1N08X is an automotive-qualified 80 V N-channel power MOSFET intended for high-current switching in power-conversion and motor-control designs. Part of the NVMTS1D1N08X series, it combines a maximum drain-source on-resistance of 1.0 mΩ with a PQFN88-3L single-cooled package.

Its low-resistance switching path, 121 nC typical total gate charge, and soft-recovery body diode make it a notable option for designs where conduction loss, gate-drive loss, and switching behaviour all need to be considered together. The device is AEC-Q101 qualified, PPAP capable, and 100% avalanche tested.

What it does

This MOSFET is used as a controllable high-current switch. With an 80 V drain-source rating and a 20 V maximum gate-source rating, it is suited to switching stages within automotive electrical systems, including 48 V architectures.

At a gate-source voltage of 10 V and drain current of 32 A, its specified maximum on-resistance is 1.0 mΩ. This low resistance helps limit conduction losses when the MOSFET is fully enhanced. The device is specified for continuous drain current up to 249 A at a case temperature of 100°C, while pulsed drain current is specified at 2059 A.

The integrated body diode has a continuous current rating of 346 A at a 25°C case temperature. Its typical reverse-recovery time is 34 ns and reverse-recovery charge is 316 nC, characteristics relevant when the device is used in switching topologies where body-diode commutation occurs.

Applications

• Automotive 48 V power-distribution and power-conversion stages
• Synchronous-rectification switches
• Automotive motor-drive switching stages
• High-current DC/DC converter power stages
• Switching circuits requiring an 80 V N-channel MOSFET

Design considerations

The NVMTS1D1N08X is supplied in a PQFN88-3L single-cooled package, so PCB land pattern, copper area, and the thermal path to the case should be considered during layout. Its specified junction-to-case thermal resistance is 0.3°C/W typical and 0.6°C/W maximum; junction-to-ambient thermal resistance is specified at 30°C/W maximum.

Gate-drive design should account for the 2.4 V to 3.6 V gate-threshold range, while the 1.0 mΩ on-resistance specification is given at VGS = 10 V. The typical total gate charge of 121 nC, along with the listed switching-delay and transition times, should be evaluated against the selected driver, switching frequency, and layout inductance.

For fault and transient analysis, the device has a 500 mJ single-pulse avalanche-energy rating and is 100% avalanche tested. Ratings remain dependent on the stated test conditions and thermal environment, with an operating junction and storage temperature range of -55°C to +175°C.

Availability and further information

The source/distributor and datasheet links on this page provide further product information, documentation, and sourcing details for the onsemi NVMTS1D1N08X.