
IXYS IXBOD2 Breakover Diode Modules
IXYSTCC-2026-09-22-ixys-ixbod2-breakover-diode-modules
IXYS IXBOD2 is a series of high-voltage breakover diode modules offering extra-fast transient and overvoltage protection with breakover voltages from 700 V to over 4000 V.
Introduction
IXYS IXBOD2 breakover diode modules are high-voltage protection devices designed for demanding power-electronics environments. The series combines extra-fast breakover response with a broad breakover-voltage selection spanning 700 V to more than 4000 V, allowing designers to choose protection devices suited to different high-voltage thresholds.
The modules are intended to address transient and overvoltage events, including those associated with lightning, arcing, battery systems, and solar arrays. Their specified critical off-state voltage slew-rate capability of up to 3000 V/µs is a notable characteristic for circuits exposed to rapidly changing high-voltage conditions.
What it does
An IXBOD2 module remains in its off state until its breakover condition is reached, then provides a low-impedance path for the overvoltage event. This behavior can help protect associated circuitry from transient-voltage exposure.
Across the series, maximum off-state current ranges from 0.2 µA to 200 µA. Devices support maximum RMS on-state current from 1.4 A to 2 A and surge-current handling up to 200 A. The series also specifies a maximum breakover current of 20 mA and maximum holding-current values from 20 mA to 40 mA.
For fast-transient conditions, IXBOD2 devices specify a maximum critical rate of rise of off-state voltage of 3000 V/µs. Maximum critical on-state current rise ranges from 150 A/µs to 500 A/µs, depending on the device. Typical turn-off time is 200 µs.
Applications
Potential applications that follow from the IXBOD2 series’ stated protection role include:
- High-voltage transient protection in power-electronics equipment
- Lightning-transient protection circuits
- Arcing-event protection arrangements
- Battery overvoltage protection systems
- Solar-array transient and overvoltage protection
- PCB-mounted high-voltage protection stages requiring a selected breakover threshold
Design considerations
The IXBOD2 series is supplied in an industry-standard-outline package for PCB mounting. Device selection should begin with the required breakover voltage, as options span from 700 V to over 4000 V.
Designers should also account for the specific module’s off-state leakage, on-state current requirements, holding-current limit, on-state voltage, and slope resistance. The series covers maximum on-state voltage values from 1.2 V to 27 V and maximum slope resistance from 80 mΩ to 3 Ω, so these parameters can vary significantly across the range.
Thermal conditions are also relevant: specified virtual junction-temperature ratings extend from -40 °C to either +125 °C or +150 °C, while the stated ambient cooling-medium range is -40 °C to +125 °C. The modules are RoHS compliant.
Availability and further information
The source/distributor and datasheet links on this page provide further information on IXYS IXBOD2 breakover diode modules, including device-level specifications and selection details.
Specifications
| Manufacturer | IXYS |
|---|---|
| Part number | TCC-2026-09-22-ixys-ixbod2-breakover-diode-modules |
| Series | IXBOD2 |
| Package | Industry standard outline package |
| Mounting | PCB mount |
| Release date | 2026-09-22 |
| Typical turn-off time | 200 µs |
| Surge current handling | up to 200 A |
| Breakover voltage range | 700 V to over 4000 V |
| Maximum breakover current | 20 mA |
| Maximum holding current range | 20 mA to 40 mA |
| Maximum on-state voltage range | 1.2 V to 27 V |
| Maximum slope resistance range | 80 mΩ to 3 Ω |
| Maximum off-state current range | 0.2 µA to 200 µA |
| Maximum threshold voltage range | 0.9 V to 17.5 V |
| Maximum RMS on-state current range | 1.4 A to 2 A |
| Virtual junction temperature range | -40 °C to +125 °C/+150 °C |
| Maximum average forward current range | 0.9 A to 1.25 A |
| Ambient temperature range (cooling medium) | -40 °C to +125 °C |
| Maximum critical rate of rise of off-state voltage | 3000 V/µs |
| Maximum critical rate of rise of on-state current range | 150 A/µs to 500 A/µs |
