IXYS IXBOD2 Breakover Diode Modules - IXYS
Semiconductors

IXYS IXBOD2 Breakover Diode Modules

IXYSTCC-2026-09-22-ixys-ixbod2-breakover-diode-modules

IXYS IXBOD2 is a series of high-voltage breakover diode modules offering extra-fast transient and overvoltage protection with breakover voltages from 700 V to over 4000 V.

EHBSA Series Capacitors

Introduction

IXYS IXBOD2 breakover diode modules are high-voltage protection devices designed for demanding power-electronics environments. The series combines extra-fast breakover response with a broad breakover-voltage selection spanning 700 V to more than 4000 V, allowing designers to choose protection devices suited to different high-voltage thresholds.

The modules are intended to address transient and overvoltage events, including those associated with lightning, arcing, battery systems, and solar arrays. Their specified critical off-state voltage slew-rate capability of up to 3000 V/µs is a notable characteristic for circuits exposed to rapidly changing high-voltage conditions.

What it does

An IXBOD2 module remains in its off state until its breakover condition is reached, then provides a low-impedance path for the overvoltage event. This behavior can help protect associated circuitry from transient-voltage exposure.

Across the series, maximum off-state current ranges from 0.2 µA to 200 µA. Devices support maximum RMS on-state current from 1.4 A to 2 A and surge-current handling up to 200 A. The series also specifies a maximum breakover current of 20 mA and maximum holding-current values from 20 mA to 40 mA.

For fast-transient conditions, IXBOD2 devices specify a maximum critical rate of rise of off-state voltage of 3000 V/µs. Maximum critical on-state current rise ranges from 150 A/µs to 500 A/µs, depending on the device. Typical turn-off time is 200 µs.

Applications

Potential applications that follow from the IXBOD2 series’ stated protection role include:

  • High-voltage transient protection in power-electronics equipment
  • Lightning-transient protection circuits
  • Arcing-event protection arrangements
  • Battery overvoltage protection systems
  • Solar-array transient and overvoltage protection
  • PCB-mounted high-voltage protection stages requiring a selected breakover threshold

Design considerations

The IXBOD2 series is supplied in an industry-standard-outline package for PCB mounting. Device selection should begin with the required breakover voltage, as options span from 700 V to over 4000 V.

Designers should also account for the specific module’s off-state leakage, on-state current requirements, holding-current limit, on-state voltage, and slope resistance. The series covers maximum on-state voltage values from 1.2 V to 27 V and maximum slope resistance from 80 mΩ to 3 Ω, so these parameters can vary significantly across the range.

Thermal conditions are also relevant: specified virtual junction-temperature ratings extend from -40 °C to either +125 °C or +150 °C, while the stated ambient cooling-medium range is -40 °C to +125 °C. The modules are RoHS compliant.

Availability and further information

The source/distributor and datasheet links on this page provide further information on IXYS IXBOD2 breakover diode modules, including device-level specifications and selection details.

Data

Specifications

ManufacturerIXYS
Part numberTCC-2026-09-22-ixys-ixbod2-breakover-diode-modules
SeriesIXBOD2
PackageIndustry standard outline package
MountingPCB mount
Release date2026-09-22
Typical turn-off time200 µs
Surge current handlingup to 200 A
Breakover voltage range700 V to over 4000 V
Maximum breakover current20 mA
Maximum holding current range20 mA to 40 mA
Maximum on-state voltage range1.2 V to 27 V
Maximum slope resistance range80 mΩ to 3 Ω
Maximum off-state current range0.2 µA to 200 µA
Maximum threshold voltage range0.9 V to 17.5 V
Maximum RMS on-state current range1.4 A to 2 A
Virtual junction temperature range-40 °C to +125 °C/+150 °C
Maximum average forward current range0.9 A to 1.25 A
Ambient temperature range (cooling medium)-40 °C to +125 °C
Maximum critical rate of rise of off-state voltage3000 V/µs
Maximum critical rate of rise of on-state current range150 A/µs to 500 A/µs