
DSxARP Automotive Silicon Schottky Barrier Diodes
LittelfuseTCC-2026-09-22-dsxarp-automotive-silicon-schottky-barrier-diodes
AEC-Q101-qualified silicon Schottky barrier diodes providing low forward voltage drop for automotive and power rectification applications.
Introduction
Littelfuse DSxARP automotive silicon Schottky barrier diodes are rectifier diodes intended for automotive and power-conversion designs. The AEC-Q101-qualified family combines silicon Schottky barrier technology with low forward-voltage characteristics, supporting efficient power rectification where conduction loss and thermal margin are important considerations.
Available in compact DO-214AA and SOD-123FL surface-mount package options, the DSxARP range provides variant-dependent electrical and temperature capabilities for designs that need to balance footprint, forward drop, leakage current, and junction-temperature requirements.
What it does
The DSxARP series conducts current in the forward direction while blocking reverse current, providing a rectification and protection function in DC power paths. Its Schottky construction is specified for a forward voltage of up to 0.45 V at 3 A through up to 0.79 V at 2 A, depending on the selected variant.
Reverse leakage current at +25°C ranges from no more than 1 μA to no more than 0.5 mA, also depending on variant. Maximum virtual junction-temperature ratings span +150°C to +175°C across the family.
The series is AEC-Q101 qualified and PPAP capable, making it relevant where automotive-component qualification and production documentation capability are considerations.
Applications
Potential uses that follow directly from the stated device function include:
- Reverse-battery polarity protection in automotive DC power inputs
- Rectification stages in DC-DC converters
- Switch-mode power-supply rectification
- Freewheeling paths for inductive loads
- General power rectification circuits requiring Schottky-diode behavior
Design considerations
DSxARP parts are offered in either DO-214AA or SOD-123FL packages, so package selection should be matched to the available board area and the requirements of the chosen variant.
Electrical characteristics vary within the series. In particular, designers should select the specific diode according to its applicable forward-voltage condition, reverse-leakage limit, and maximum virtual junction-temperature rating rather than treating the family-wide ranges as a single-device specification. Automotive designs may also benefit from confirming the AEC-Q101 qualification and PPAP capability requirements for the intended program.
Availability and further information
The source/distributor and datasheet links on this page provide further information on DSxARP series variants, detailed electrical characteristics, package information, and ordering details.
Specifications
| Manufacturer | Littelfuse |
|---|---|
| Part number | TCC-2026-09-22-dsxarp-automotive-silicon-schottky-barrier-diodes |
| Series | DSxARP |
| Technology | Silicon Schottky barrier |
| Package | DO-214AA or SOD-123FL |
| Release date | 2026-09-22 |
| Qualification | AEC-Q101 qualified |
| Forward voltage | ≤0.45 V at 3 A to ≤0.79 V at 2 A, depending on variant |
| PPAP capability | PPAP capable |
| Reverse leakage current at +25°C | ≤1 μA to ≤0.5 mA, depending on variant |
| Maximum virtual junction temperature | +150°C to +175°C, depending on variant |
