HybridPACK HD CoolSiC MOSFET Module - Infineon Technologies
Modules

HybridPACK HD CoolSiC MOSFET Module

Infineon TechnologiesFF01MR14A60MA2XT

A 1400 V CoolSiC MOSFET half-bridge power module with a direct-cooled PinFin baseplate for electric commercial-vehicle drivetrains.

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Introduction

The Infineon FF01MR14A60MA2XT is a HybridPACK HD half-bridge power module built around CoolSiC MOSFET technology for high-voltage electric commercial-vehicle drivetrains. Its 1400 V drain-source rating and direct-cooled PinFin baseplate address the demands of future high-voltage battery architectures, while .XT interconnection technology is used for the module’s high-current power connections.

What it does

This module integrates two CoolSiC MOSFET switches in a half-bridge configuration, providing a building block for high-current power-conversion stages. It is specified for 850 A implemented drain current, with continuous DC drain current of 785 A at a 175°C junction temperature and 65°C fluid temperature. Repetitive peak drain current is rated at 1700 A.

The module supports operation at junction temperatures up to +175°C. Its direct-cooled PinFin baseplate is intended to interface with a liquid-cooling system, and the cooling circuit is specified for pressures up to 3 bar. An integrated temperature sensor is included for thermal monitoring.

At 850 A and a 15 V gate drive, typical drain-source on-resistance is specified as 1.16 mΩ at 25°C, 1.77 mΩ at 125°C, and 2.26 mΩ at 175°C. Recommended gate-voltage ranges are 15 V to 18 V for the on state and -5 V to -3 V for the off state.

Applications

  • Traction inverter power stages for heavy-duty electric commercial vehicles
  • High-voltage battery-electric drivetrain converters
  • Half-bridge stages in high-current power-conversion systems
  • Liquid-cooled power electronics designed around HybridPACK HD modules

Design considerations

The FF01MR14A60MA2XT is supplied in the HybridPACK HD package and uses laser-weldable power terminals with PressFIT auxiliary contacts. These connection choices should be accommodated in the mechanical and assembly design.

Thermal integration is a primary consideration: the direct-cooled PinFin baseplate requires a compatible cooling interface, and the 785 A continuous-current condition is specified with 65°C fluid temperature. The baseplate operating temperature is limited to +150°C, while the module’s maximum junction temperature is +175°C.

Gate-drive design should follow the stated recommended ranges, including negative off-state gate bias. The module has a typical total gate charge of 2.2 µC, internal gate resistance of 0.17 Ω, and typical module stray inductance of 6.5 nH. Electrical insulation and layout should also account for the 3.4 kV RMS isolation test voltage and the stated terminal-to-terminal and terminal-to-baseplate creepage and clearance distances.

Availability and further information

Further technical information is available through the Mouser Electronics source link and the datasheet link provided on this page.

Data

Specifications

ManufacturerInfineon Technologies
Part numberFF01MR14A60MA2XT
SeriesHybridPACK HD
FamilyHybridPACK HD
TechnologyCoolSiC MOSFET with .XT interconnection
PackageHybridPACK HD
Release date2026-10-02
ConfigurationHalf-bridge power module
Module weight435g
QualificationAQG 324; IPC-9797
Total gate charge2.2µC
Drain-source voltage1400V
Isolation test voltage3.4kV RMS for 1 minute
Module lead resistance0.4mΩ per switch
Module stray inductance6.5nH typical
Vibration qualificationISO 16750-3
Internal gate resistance0.17Ω
Implemented drain current850A
Storage temperature range-40°C to +125°C
Comparative tracking index175
Continuous DC drain current785A at 175°C junction temperature and 65°C fluid temperature
Repetitive peak drain current1700A
Operating junction temperatureUp to +175°C
Maximum cooling-circuit pressure3bar
Maximum baseplate operating temperature+150°C
Minimum clearance, terminal to terminal13.2mm
Recommended on-state gate voltage range15V to 18V
Minimum clearance, terminal to baseplate14.0mm
Recommended off-state gate voltage range-5V to -3V
Minimum creepage distance, terminal to terminal17.6mm
Minimum creepage distance, terminal to baseplate16.6mm
Drain-source on-resistance at 850A, 15V gate voltage, 25°C junction temperature1.16mΩ typical; 1.58mΩ maximum
Drain-source on-resistance at 850A, 18V gate voltage, 25°C junction temperature1.36mΩ typical
Drain-source on-resistance at 850A, 15V gate voltage, 125°C junction temperature1.77mΩ typical
Drain-source on-resistance at 850A, 15V gate voltage, 175°C junction temperature2.26mΩ typical
Drain-source on-resistance at 850A, 18V gate voltage, 125°C junction temperature1.65mΩ typical
Drain-source on-resistance at 850A, 18V gate voltage, 175°C junction temperature2.15mΩ typical