
HybridPACK HD CoolSiC MOSFET Module
Infineon TechnologiesFF01MR14A60MA2XT
A 1400 V CoolSiC MOSFET half-bridge power module with a direct-cooled PinFin baseplate for electric commercial-vehicle drivetrains.
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Introduction
The Infineon FF01MR14A60MA2XT is a HybridPACK HD half-bridge power module built around CoolSiC MOSFET technology for high-voltage electric commercial-vehicle drivetrains. Its 1400 V drain-source rating and direct-cooled PinFin baseplate address the demands of future high-voltage battery architectures, while .XT interconnection technology is used for the module’s high-current power connections.
What it does
This module integrates two CoolSiC MOSFET switches in a half-bridge configuration, providing a building block for high-current power-conversion stages. It is specified for 850 A implemented drain current, with continuous DC drain current of 785 A at a 175°C junction temperature and 65°C fluid temperature. Repetitive peak drain current is rated at 1700 A.
The module supports operation at junction temperatures up to +175°C. Its direct-cooled PinFin baseplate is intended to interface with a liquid-cooling system, and the cooling circuit is specified for pressures up to 3 bar. An integrated temperature sensor is included for thermal monitoring.
At 850 A and a 15 V gate drive, typical drain-source on-resistance is specified as 1.16 mΩ at 25°C, 1.77 mΩ at 125°C, and 2.26 mΩ at 175°C. Recommended gate-voltage ranges are 15 V to 18 V for the on state and -5 V to -3 V for the off state.
Applications
- Traction inverter power stages for heavy-duty electric commercial vehicles
- High-voltage battery-electric drivetrain converters
- Half-bridge stages in high-current power-conversion systems
- Liquid-cooled power electronics designed around HybridPACK HD modules
Design considerations
The FF01MR14A60MA2XT is supplied in the HybridPACK HD package and uses laser-weldable power terminals with PressFIT auxiliary contacts. These connection choices should be accommodated in the mechanical and assembly design.
Thermal integration is a primary consideration: the direct-cooled PinFin baseplate requires a compatible cooling interface, and the 785 A continuous-current condition is specified with 65°C fluid temperature. The baseplate operating temperature is limited to +150°C, while the module’s maximum junction temperature is +175°C.
Gate-drive design should follow the stated recommended ranges, including negative off-state gate bias. The module has a typical total gate charge of 2.2 µC, internal gate resistance of 0.17 Ω, and typical module stray inductance of 6.5 nH. Electrical insulation and layout should also account for the 3.4 kV RMS isolation test voltage and the stated terminal-to-terminal and terminal-to-baseplate creepage and clearance distances.
Availability and further information
Further technical information is available through the Mouser Electronics source link and the datasheet link provided on this page.
Specifications
| Manufacturer | Infineon Technologies |
|---|---|
| Part number | FF01MR14A60MA2XT |
| Series | HybridPACK HD |
| Family | HybridPACK HD |
| Technology | CoolSiC MOSFET with .XT interconnection |
| Package | HybridPACK HD |
| Release date | 2026-10-02 |
| Configuration | Half-bridge power module |
| Module weight | 435g |
| Qualification | AQG 324; IPC-9797 |
| Total gate charge | 2.2µC |
| Drain-source voltage | 1400V |
| Isolation test voltage | 3.4kV RMS for 1 minute |
| Module lead resistance | 0.4mΩ per switch |
| Module stray inductance | 6.5nH typical |
| Vibration qualification | ISO 16750-3 |
| Internal gate resistance | 0.17Ω |
| Implemented drain current | 850A |
| Storage temperature range | -40°C to +125°C |
| Comparative tracking index | 175 |
| Continuous DC drain current | 785A at 175°C junction temperature and 65°C fluid temperature |
| Repetitive peak drain current | 1700A |
| Operating junction temperature | Up to +175°C |
| Maximum cooling-circuit pressure | 3bar |
| Maximum baseplate operating temperature | +150°C |
| Minimum clearance, terminal to terminal | 13.2mm |
| Recommended on-state gate voltage range | 15V to 18V |
| Minimum clearance, terminal to baseplate | 14.0mm |
| Recommended off-state gate voltage range | -5V to -3V |
| Minimum creepage distance, terminal to terminal | 17.6mm |
| Minimum creepage distance, terminal to baseplate | 16.6mm |
| Drain-source on-resistance at 850A, 15V gate voltage, 25°C junction temperature | 1.16mΩ typical; 1.58mΩ maximum |
| Drain-source on-resistance at 850A, 18V gate voltage, 25°C junction temperature | 1.36mΩ typical |
| Drain-source on-resistance at 850A, 15V gate voltage, 125°C junction temperature | 1.77mΩ typical |
| Drain-source on-resistance at 850A, 15V gate voltage, 175°C junction temperature | 2.26mΩ typical |
| Drain-source on-resistance at 850A, 18V gate voltage, 125°C junction temperature | 1.65mΩ typical |
| Drain-source on-resistance at 850A, 18V gate voltage, 175°C junction temperature | 2.15mΩ typical |
