
SFH 4049B/BR Chip LED Lens 940nm Infrared Emitters
ams OSRAMTCC-2026-10-06-sfh-4049b-br-chip-led-lens-940nm-infrared-emitters
SFH 4049B/BR are compact surface-mount infrared emitters with black epoxy lenses, 940 nm centroid wavelength, and top-emitting or reverse-mount configurations.
Introduction
ams OSRAM’s SFH 4049B/BR series consists of compact surface-mount infrared LED emitters designed for space-constrained sensing and illumination designs. The series combines a black epoxy lens package with a 940 nm typical centroid wavelength, a narrow 8° half-angle, and 12 ns typical rise and fall times.
Two mounting-orientation options are available within the line: the SFH 4049B is a standard top-emitting device, while the SFH 4049BR uses a reverse-mount configuration with identical optical performance. This enables optical placement flexibility without changing the stated wavelength or emitter characteristics.
What it does
The SFH 4049B/BR produces near-infrared output with a 950 nm typical peak wavelength and 940 nm typical centroid wavelength. Its optical pattern is relatively focused, with an 8° half-angle, supporting designs that need directed infrared illumination rather than broad-area emission.
Typical total radiant flux is specified from 56 mW to 80 mW, while radiant intensity is specified at 11.2 mW/sr to 35.5 mW/sr, with 21 mW/sr typical. At higher drive conditions, the devices are specified for up to 205 mW/sr at 70 mA and 285 mW/sr at 100 mA.
Fast switching is a central characteristic of the series: typical rise and fall times are 12 ns. The devices support forward current from 1 mA to 100 mA and permit pulsed operation up to 0.7 A, subject to the applicable electrical and thermal design limits.
Applications
Potential uses that follow directly from the emitter’s directed infrared output, compact surface-mount format, and fast switching include:
- Infrared proximity and object-detection sensors
- Access-control and identification systems using infrared illumination
- Tracking systems requiring narrow-angle IR emission
- Factory-automation sensing equipment
- Compact modulated infrared illumination assemblies
- Optical systems where top-emitting or reverse-mount emitter orientation is useful
Design considerations
The SFH 4049B/BR is supplied in a black epoxy surface-mount package, so PCB footprint, optical alignment, and assembly orientation should be selected for the intended top-emitting or reverse-mount configuration. The SFH 4049B and SFH 4049BR provide the same stated optical performance but differ in emission orientation.
Electrical design should account for the 1.20 V to 1.65 V forward-voltage range, the 100 mA maximum stated forward current, and the 0.7 A maximum pulsed-current rating. Reverse bias should remain within the 5 V maximum reverse-voltage limit, with reverse current specified at 10 µA maximum.
Thermal conditions also require attention. The specified junction-to-solder-point thermal resistance is 280 K/W maximum, the operating-temperature range is −40°C to +85°C, and the maximum junction temperature is +100°C. The device includes ESD protection rated to 2 kV HBM Class 2 according to ANSI/ESDA/JEDEC JS-001, but normal ESD-control practices remain important during handling and assembly.
Availability and further information
The Mouser Electronics source link on this page provides further distributor information for the SFH 4049B/BR infrared emitter series. Refer to the linked source and any available datasheet documentation for complete electrical, optical, mechanical, and application details.
Specifications
| Manufacturer | ams OSRAM |
|---|---|
| Part number | TCC-2026-10-06-sfh-4049b-br-chip-led-lens-940nm-infrared-emitters |
| Series | SFH 4049B/BR |
| Technology | Infrared LED |
| Package | Black epoxy surface-mount package |
| Mounting | Surface mount |
| Release date | 2026-10-06 |
| Half-angle | 8° |
| ESD protection | 2 kV, HBM Class 2, per ANSI/ESDA/JEDEC JS-001 |
| Rise/fall time | 12 ns typical |
| Forward current | 1 mA to 100 mA |
| Forward voltage | 1.20 V to 1.65 V |
| Peak wavelength | 950 nm typical |
| Reverse current | 10 µA maximum |
| Radiant intensity | 11.2 mW/sr to 35.5 mW/sr; 21 mW/sr typical |
| Total radiant flux | 56 mW to 80 mW typical |
| Centroid wavelength | 940 nm typical |
| Maximum pulsed current | 0.7 A |
| Maximum reverse voltage | 5 V |
| Radiant intensity at 70 mA | Up to 205 mW/sr |
| Operating temperature range | -40°C to +85°C |
| Radiant intensity at 100 mA | 285 mW/sr |
| Maximum junction temperature | +100°C |
| Thermal resistance, junction to solder point | 280 K/W maximum |
