Latest Components

Octal D-Type Flip-Flops

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Texas Instruments SN74AHCT273/SN74AHCT273-Q1 Semiconductors

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Texas Instruments SN74AHCT273/SN74AHCT273-Q1 Octal D-Type Flip-Flops include 8 positive-edge-triggered D-type flip-flops with a direct Clear (CLR) input. These devices are designed to store and synchronize digital data across eight channels. Typical applications include servers, network switches, memory systems, and databases.

Texas Instruments SN74AHC273/SN74AHC273-Q1 Octal D-Type Flip-Flops

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Texas Instruments SN74AHC273/SN74AHC273-Q1 Semiconductors

Description

The Texas Instruments SN74AHC273/SN74AHC273-Q1 Automotive Octal D-Type Flip-Flops contain eight positive-edge-triggered D-type flip-flops with a direct active low clear (CLR) input. They operate at a supply range of 2V to 5.5V and support 130MHz at 5V, making them ideal for synchronizing data to the clock. These devices are AEC-Q100 qualified for automotive applications.

Texas Instruments SN74ACT10-Q1 Automotive NAND Gate

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Texas Instruments SN74ACT10-Q1 Semiconductors

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The Texas Instruments SN74ACT10-Q1 Automotive NAND Gate is a high-performance, triple 3-input positive-NAND gate designed for modern electronic systems. It features advanced CMOS technology for fast switching speeds and low power consumption, operating over a voltage range of 4.5V to 5.5V. This device is AEC-Q100 qualified for automotive applications, making it ideal for alarm/tamper detect circuits and S-R latches.

Microchip Technology DSA15x Automotive MEMS Oscillators

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Microchip Technology DSA15x Semiconductors

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Microchip Technology DSA15x Automotive MEMS Oscillators are designed for high reliability, low jitter, and low power consumption in harsh automotive environments. These MEMS oscillators provide excellent jitter and stability performance over a wide supply voltage range and temperature. They are ideal for automotive applications such as infotainment and ADAS, and are AEC-Q100 qualified, lead-free, and RoHS compliant.

Microchip Technology 1200V SIC MOSFETs

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Microchip Technology MSC020SMB120B4N Semiconductors

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Microchip Technology 1200V SIC MOSFETs offer high efficiency in a lighter, more compact solution. The devices supply low internal gate resistance (ESR), resulting in a fast switching speed. The MOSFETs are simple to drive and easy to parallel, with improved thermal capabilities and lower switching losses.

Nexperia BUK7Q N-Channel MOSFET in MLPAK33-WF Package

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Nexperia BUK7Q Semiconductors

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Nexperia BUK7Q N-Channel MOSFETs in an MLPAK33-WF Package (SOT8002-3D) use Trench 9 technology. Qualified to meet AEC-Q101 requirements at 175°C, they offer a small footprint for compact designs. The device features side-wettable flanks that provide robust solder joints and automated optical inspection.

Precision Isolated Amplifiers

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Texas Instruments AMC0x30D/AMC0x30D-Q1 Semiconductors

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Texas Instruments AMC0x30D/AMC0x30D-Q1 Precision Isolated Amplifiers feature a ±1V, high impedance input and fixed-gain, differential output. They are designed for high-impedance voltage signal sources and provide isolation up to 5kVRMS. These amplifiers are AEC-Q100 qualified for automotive applications and specified over a temperature range of -40°C to +125°C.

Morse Micro MM8108 Wi-Fi® HaLow® SoC

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Morse Micro MM8108 Semiconductors

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The Morse Micro MM8108 is a highly integrated, ultra-low-power, single-chip Wi-Fi HaLow-compliant connectivity solution. It supports data rates up to 43.33Mbps at 8MHz bandwidth, making it ideal for IoT and M2M applications. This SoC meets the IEEE 802.11ah standard and integrates full MAC and PHY implementations.

CMOS Quad 3-State NOR R/S Latches

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Texas Instruments CD4043B Semiconductors

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Texas Instruments CD4043B CMOS Quad 3-State NOR R/S Latches are high-performance quad RS latches designed for dependable data storage and control in digital electronics. Each latch operates independently, making it ideal for applications requiring multiple data retention points. With 3-state outputs and compatibility across various voltages, the CD4043B offers flexibility and efficiency for both commercial and industrial designs.

IXYS IXSxNxL2Kx Silicon Carbide (SiC) MOSFETs

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IXYS IXSXNXL2KX Semiconductors

Description

The IXYS IXSxNxL2Kx Silicon Carbide (SiC) MOSFETs feature high blocking voltage with low on-state resistance, ranging from 25mΩ to 160mΩ, and continuous drain current between 20A and 111A. These devices are designed for high-speed switching with low capacitance and include an ultra-fast intrinsic body diode. Available with a 650V or 1200V drain-source voltage rating, they come in various packages including TO-263-7L, TOLL-8, and TO-247-4L.

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