Latest Components
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Alliance Memory AS4C1G8D3LA / AS4C512M16D3LA/D3LB SemiconductorsDescription
These dual-die 8Gb DDR3L SDRAMs are pin-compatible replacements for Micron's EOL single-die devices, offered in 78-ball and 96-ball FBGA packages. They feature fast data rates up to 1866Mbps, operate at 1.35V (backward compatible to 1.5V), and are suitable for main memory in servers, embedded, industrial, medical, and automotive applications. RoHS-compliant and halogen-free, they support both commercial and industrial temperature ranges.
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Digi International ConnectCore 6UL-2 SemiconductorsDescription
The Digi ConnectCore MP1 SoMs are intelligent, wireless, and secure embedded system-on-modules based on the STM32MP1 MPU family. They feature robust security, dual-Ethernet, Wi-Fi, Bluetooth connectivity, and turnkey Linux support in a compact Digi SMTplus form factor. Ideal for secure, connected IoT and industrial applications.
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onsemi NCV7357 SemiconductorsDescription
The NCV7357 is a high-speed CAN FD transceiver that interfaces between a CAN protocol controller and the physical bus, supporting data rates up to 5 Mbps. It offers robust communication, low electromagnetic emission, and high ESD robustness, making it ideal for automotive and industrial networks. The device is compatible with ISO 11898-2:2016 and features silent mode and direct interfacing with 3V to 5V microcontrollers.
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Diodes Incorporated PI6CG18xQ & PI6CB184Q SemiconductorsDescription
The PI6CG18xQ family consists of AEC-Q100 qualified low power PCIe Gen4 clock generators with multiple outputs and on-chip termination, reducing external component count. The PI6CB184Q is a PCIe Gen4 clock buffer with 4 outputs and individual output enables for power management. Both are designed for automotive applications and support extended temperature ranges.
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Renesas Intersil ISL71610M / ISL71710M SemiconductorsDescription
The ISL71610M and ISL71710M are radiation-tolerant digital isolators designed for isolated power supply and serial communication interfaces, especially in satellite and space applications. Utilizing Giant Magneto Resistive (GMR) technology, they offer high data rates, superior isolation, and low EMI. These devices are fully characterized for radiation performance and operate across a wide temperature range.
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onsemi FFSB0665A SemiconductorsDescription
The FFSB0665A is a 650V, 6A Silicon Carbide (SiC) Schottky diode in a D2PAK package, offering superior switching performance and high reliability. It features no reverse recovery current, temperature-independent switching, and excellent thermal performance. Ideal for PFC, industrial power, solar, EV chargers, and UPS applications.
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Micron MT35X SemiconductorsDescription
Micron Xccela Flash Memory delivers high-speed NOR flash performance with a reduced pin count and low energy consumption. It supports densities from 256Mb to 2Gb and features a new interface for instant-on and fast system responsiveness in automotive, industrial, consumer, and networking applications. The device enables simpler system designs and lower system costs while maintaining robust security features.
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Microchip SAMV71Q21RT SemiconductorsDescription
The SAMV71Q21RT is a radiation tolerant ARM Cortex-M7 microcontroller designed for aerospace applications, offering high reliability and enhanced performance in extreme environments. It features extensive connectivity options including CAN FD and Ethernet TSN, and robust memory and system management. Its space-grade screening ensures suitability for mission-critical systems.
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ROHM SCT3xxxxxHR series SemiconductorsDescription
The SCT3xxxxxHR series is a family of AEC-Q101 qualified SiC MOSFETs designed for high reliability in automotive on-board chargers and DC/DC converters. These MOSFETs support high power and efficiency requirements for electric vehicles, with variants available in both 650V and 1200V ratings. The series features a trench gate structure for reduced power loss and increased performance.
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onsemi NCP51705 SemiconductorsDescription
The NCP51705 is a high-speed, low-side gate driver designed to drive SiC MOSFET transistors with up to 6A peak output current. It features a user-adjustable negative charge pump, high dV/dt immunity, and an accessible 5V reference rail for isolated applications. This device minimizes switching losses and enhances reliability in high-performance inverter and motor drive systems.
