Latest Components
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Texas Instruments AFE53004W SemiconductorsDescription
Texas Instruments AFE53004W Smart Analog Front Ends (AFEs) are a family of 4-channel, ultra-low power smart AFE devices available in a 16-pin DSBGA package. These devices feature 10-bit ADC input, a 50MHz SPI-compatible interface, and a wide supply voltage range of 1.8V to 5.5V. Ideal for optical modules and standard notebook PCs, they support configurable GPIO and user-programmable Non-Volatile Memory.
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Texas Instruments TLIN4029A-Q1 SemiconductorsDescription
The TLIN4029A-Q1 Automotive Local Interconnect Network (LIN) Transceivers feature dominant state timeout and extended fault protection. Designed for 12V and 24V LIN applications, these transceivers include integrated wake-up and protection features, ensuring compliance with multiple LIN standards. Ideal for automotive applications, they provide robust performance with extensive fault protection.
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IXYS DPU60I1200HA SemiconductorsDescription
IXYS DP High-Voltage, Fast-Recovery Diodes are 600V or 1200V Schottky diodes with low reverse leakage current and fast recovery time. These diodes are designed as planar passivated chips in TO-220 or TO-247 package types. They are suitable for applications such as anti-parallel diodes for high-frequency switching devices and rectifiers in switch-mode power supplies.
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Qorvo QPD1004AEVB SemiconductorsDescription
The Qorvo QPD1004AEVB Evaluation Board is a fully assembled RF evaluation board designed for the QPD1004A GaN-on-SiC input-matched transistor. It facilitates device characterization and amplifier prototyping in the 100MHz to 1GHz band, featuring a 50Ω input match and a tunable output network. Ideal for applications in military radar, communications, and test instrumentation.
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Texas Instruments SN74ACT3G97/Q1 SemiconductorsDescription
The Texas Instruments SN74ACT3G97/Q1 Dual Configurable Data Flip-Flops incorporate three independent '97 function configurable logic gates with Schmitt trigger inputs. These flip-flops are AEC-Q100 qualified for automotive applications and support a wide range of one- or two-input logic functions. They are designed for fast operation and can handle slow or noisy input signals effectively.
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Littelfuse SM15KPA-HRA & SM30KPA-HRA SemiconductorsDescription
Littelfuse SM15KPA-HRA and SM30KPA-HRA High Reliability Transient Voltage Suppressor (TVS) Diodes protect I/O interfaces and other vulnerable circuits in avionics and aviation applications. These diodes are designed to safeguard sensitive electronic equipment against voltage transients caused by lightning and other events. They offer a fast response time of <1ps and are housed in a low-profile, surface-mount package.
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Qorvo QPD1014AEVB SemiconductorsDescription
The Qorvo QPD1014AEVB Evaluation Board is a fully assembled RF evaluation board designed for the QPD1014A GaN-on-SiC input-matched transistor. It facilitates device characterization and amplifier prototyping in the 100MHz to 1GHz band. This board features a 50Ω input match and a tunable output network for optimal power and efficiency.
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Qorvo QPD1014A SemiconductorsDescription
Qorvo QPD1014A GaN Input Matched Transistors are 15W (P3dB), 50Ω input matched discrete Gallium Nitride (GaN) on Silicon Carbide (SiC) High Electron Mobility Transistor (HEMT), operating from 30MHz to 1.2GHz on a 50V supply rail. The integrated input matching network enables wideband gain and power performance, while the compact package is ideal for space-constrained handheld radios.
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Texas Instruments SN74ACT2G100/SN74ACT2G100-Q1 SemiconductorsDescription
Texas Instruments SN74ACT2G100/SN74ACT2G100-Q1 Flip-Flops contain two independent D-type flip-flops with rising-edge-triggered clock, active-low clear, and configurable logic data inputs. These devices are AEC-Q100 qualified for automotive applications and support slow or noisy input signals. They are available in a wettable flank QFN package with an operating voltage range of 4.5V to 5.5V.
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Qorvo QPD1011A SemiconductorsDescription
The Qorvo QPD1011A GaN Input Matched Transistors are 7W discrete Gallium Nitride (GaN) on Silicon Carbide (SiC) High Electron Mobility Transistors (HEMT) that operate from 30MHz to 1.2GHz. They feature an integrated input matching network for wideband gain and power performance, housed in a compact 6mm x 5mm x 0.85mm leadless SMT package. These transistors are ideal for applications in military and civilian radar, as well as radio communications.
