Latest Components
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ROHM Semiconductor SCT4013DEC11 SemiconductorsDescription
ROHM Semiconductor 750V N-Channel SiC MOSFETs can boost switching frequency, thereby decreasing the volume of capacitors, reactors, and other components required. These devices offer high withstand voltages, low on-resistance, and high-speed switching characteristics, leveraging the unique attributes of SiC technology. Available in various packages, they are suitable for applications like solar inverters and motor drives.
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Diodes Incorporated PI5USB216EQ SemiconductorsDescription
The Diodes Inc. PI5USB216EQ USB 2.0 Signal Conditioner is designed to boost signals and insert pre-emphasis to compensate for ISI (Inter-Signal Interference). It features a patent-pending design to maintain stable common mode with symmetrical Boost/Pre-emphasis on D+/D-. This device is compatible with USB On-The-Go (OTG) and Battery Charging 1.2 (BC 1.2) protocols.
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Silanna SDEVK SemiconductorsDescription
Silanna Plural™ Evaluation Kits are designed to evaluate the Analog-to-Digital Converters (ADCs). These kits include an ADC evaluation board, SD memory card, USB Type-C to Ethernet adapter, and a Quick Start Guide. They require a ZedBoard Zynq-7000 ARM/FPGA SoC development board to operate.
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Texas Instruments TSDx-Q1 SemiconductorsDescription
Texas Instruments TSDx-Q1 Unidirectional TVS Diodes are designed to clamp harmful transients such as ESD and surge. These diodes provide ESD protection up to ±30kV and feature <20pF IO capacitance with ultra-low leakage current. They are AEC-Q101 qualified for automotive applications and suitable for I/O and power line protection.
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Analog Devices Inc. MAX74810 SemiconductorsDescription
The Analog Devices MAX74810 is a dual-channel, zero-drift operational amplifier designed for low noise and power applications. It features rail-to-rail output and is optimized for accuracy over a wide range of conditions. With a temperature range of -40°C to +125°C, it is suitable for various applications including load cells and automotive sensors.
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Infineon Technologies IRS9103AXTSA1 SemiconductorsDescription
Infineon VCSEL REAL3™ Laser Diode Driver ICs are cost-effective, small-footprint ICs for Time-of-Flight (ToF) image sensors for fast-switching laser diodes or LEDs. They allow highly efficient conversion from electrical to optical power and support high modulation frequencies for automotive-grade applications. These drivers are suitable for various applications including LiDar systems and laser distance sensors.
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Texas Instruments SN74CB3T3245 SemiconductorsDescription
Texas Instruments SN74CB3T3245 8-Bit FET Bus Switches are high-speed, TTL-compatible switches with low ON-state resistance for minimal propagation delay. These bus switches support mixed-mode signal operation on all data I/O ports by providing voltage translation that tracks VCC. Typical applications include level translation, PCI interface, USB interface, and bus isolation.
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Infineon Technologies 1ED301xMC12I SemiconductorsDescription
Infineon Technologies EiceDRIVER 1ED301xMC12I Gate Driver ICs are opto-compatible, galvanically isolated single-channel gate drivers for IGBT, Si, or SiC MOSFET. These ICs feature exceptional common-mode transient immunity and low propagation delay, making them suitable for high ambient temperatures and fast switching applications. Typical applications include industrial motor drives, EV charging, and solar inverters.
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onsemi NJNJWS200N031L SemiconductorsDescription
The onsemi NVNJWS200N031L Single N-Channel Power MOSFET has a drain-to-source breakdown voltage (V(BR)DSS) of 30V and a continuous drain current (I(D)) rating of 3.3A. It features a low RDS(on) of 200mΩ to minimize conduction losses and a low input capacitance of 89pF. This device is AEC-Q101 qualified and suitable for various applications including low side load switches and DC-DC converters.
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Infineon Technologies IQEH50NE2LM7ZCGATMA1 SemiconductorsDescription
Infineon Technologies N-Channel OptiMOS™ 7 Power MOSFETs are high-performance N-channel transistors designed for demanding power conversion applications. These MOSFETs offer very low on-resistance, superior thermal resistance, and excellent Miller ratio for dv/dt ruggedness. The OptiMOS™ 7 power MOSFETs are optimized for both hard-switching and soft-switching topologies.
