Latest Components
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ROHM Semiconductor RH7L04 SemiconductorsDescription
ROHM Semiconductor RH7L04 60V N-Channel Power MOSFETs are AEC-Q101 qualified, rated for 60V drain-source voltage and ±40A continuous drain current. These MOSFETs feature low on-state resistance and come in a compact 3.3mm x 3.3mm DFN-8 package. They are ideal for applications in Advanced Driver Assistance Systems (ADAS), lighting, and body control.
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ROHM Semiconductor RQ5G040AT SemiconductorsDescription
The ROHM Semiconductor RQ5G040AT is a -40V P-Channel Small Signal MOSFET with a continuous drain current rating of ±4.0A. It features a low on-state resistance of 46.0mΩ and comes in a compact SOT-346T package, making it ideal for switching and motor drive applications. This device is also Pb-free and RoHS-compliant.
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ROHM Semiconductor RH7G04 SemiconductorsDescription
ROHM Semiconductor RH7G04 40V N-Channel Power MOSFETs are automotive-grade MOSFETs with a 40V drain-source voltage and ±40A continuous drain current rating. They feature low drain-source on-state resistance and are suitable for Advanced Driver Assistance Systems (ADAS), lighting, and body applications. These devices are AEC-Q101 qualified and come in a compact DFN-8 package.
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Nexperia BUK6Q26-40PJ SemiconductorsDescription
Nexperia BUK6Q26-40PJ MOSFET is an automotive, P-channel enhancement mode FET in a small MLPAK33 package. It offers logic-level compatibility and is suitable for applications like reverse polarity protection and high-speed line drivers. This MOSFET is AEC-Q101 qualified, making it ideal for automotive use.
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ROHM Semiconductor JMZV8.2B SemiconductorsDescription
ROHM Semiconductor JMZV8.2B 5mA Zener Diodes come in a small power mold package (PMDE) and are suitable for voltage regulation applications. The zener voltage for these devices is between 8.02V and 8.36V at 5.0mA. These diodes have a maximum power dissipation of 1000mW and a maximum junction temperature of +150°C.
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Nexperia BUK6Q12-40PJ SemiconductorsDescription
Nexperia BUK6Q12-40PJ MOSFET is a 40V, automotive, P-channel FET in an MLPAK33 (SOT8002-3) SMD plastic package using Trench MOSFET technology. This MOSFET is ideal for reverse polarity protection, high-speed line drivers, high-side load switches, and relay drivers. It is AEC-Q101 qualified and features side-wettable flanks for optical solder inspection.
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Nexperia BUK6Q21-30PJ SemiconductorsDescription
Nexperia BUK6Q21-30PJ MOSFET is an automotive, 30V P-channel enhancement mode FET in a compact MLPAK33 package. It features logic-level compatibility and is suitable for applications such as reverse polarity protection and high-speed line drivers. This MOSFET is AEC-Q101 qualified, ensuring reliability in automotive environments.
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ROHM Semiconductor BR25G-5 SemiconductorsDescription
ROHM Semiconductor BR25G-5 SPI BUS EEPROMs are 16Kbit serial EEPROMs with an SPI BUS interface and 4 million write cycles. They feature a 32-byte page size, a supply voltage range of 1.6V to 5.5V, and a maximum write time of 3.5ms. Typical applications include AV equipment, telecommunication equipment, and home electronic appliances.
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Diodes Incorporated PI3HDX12311 & PI3HDX6311 SemiconductorsDescription
Diodes Inc. PI3HDX12311 and PI3HDX6311 Hybrid ReDrivers™ are 3.3V quad-channel devices supporting HDMI 2.1 and 2.0 with data rates up to 12Gbps and 6Gbps respectively. They are backward compatible with HDMI 1.4 and feature pin strap mode control for various operational settings. The compact X1-QFN2845-32 package allows for efficient PCB space utilization.
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Guerrilla RF GRFx SemiconductorsDescription
Guerrilla RF GRFx GaN HEMT Power Transistors are unmatched discrete GaN-on-SiC HEMT power transistors designed for high-performance RF applications. They operate across a wide frequency range of DC to 6GHz, 7GHz, and 8GHz with an operating drain voltage of 28V and 50V. Typical applications include cellular infrastructure, radar systems, communications, and test instrumentation.
