Latest Components
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Bourns SMF4C & SMF4C-Q SemiconductorsDescription
Bourns SMF4C Transient Voltage Suppressor (TVS) Diodes protect against voltage transients induced by inductive load switching in various applications. The SMF4C-Q is AEC-Q101 compliant, suitable for automotive electronics. These diodes offer 400W peak pulse power dissipation in a compact DFN3419 package.
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BIVAR PLCC-LED OptoelectronicsDescription
BIVAR Single Color PLCC LEDs are offered in industry-standard 3020 and 3528 PLCC packages with high luminous intensity and wide viewing angles. These LEDs feature low power consumption and high power efficiency, making them ideal for battery-powered equipment. They are suitable for small-scale applications such as illumination, general indication, and backlighting.
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BIVAR SMTLA5050RGB/SMTLA5050RGBW OptoelectronicsDescription
BIVAR 5050 addressable RGB/RGBW Multi-Color LEDs are intelligently controlled LED light sources that integrate a control circuit and a light-emitting circuit. These LEDs deliver high power efficiency, high luminous intensity, and wide viewing angle in a low-profile package. Typical applications include office and communications equipment, measurement instruments, and industrial usage and appliances.
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Semtech RClamp03301H-RClamp0801H SemiconductorsDescription
The Semtech RClamp03301H-RClamp0801H RailClamp® ESD and EOS Protection devices are designed to protect high-speed Ethernet lines. They feature low capacitance and high surge capability, making them ideal for industrial and telecom applications. With a small size and fast response time, these devices ensure reliable performance without degradation.
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Espressif Systems ESP32-C61 SemiconductorsDescription
The ESP32-C61 is a System-on-Chip (SoC) designed for IoT devices, featuring Wi-Fi 6 and Bluetooth 5 (LE) connectivity. It supports optimized peripherals, improved connectivity, and increased memory options, making it suitable for a wide range of applications. With ultra-low power consumption and external PSRAM support, it allows for feature-rich applications without memory constraints.
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Nexperia GANB1R2-040QBA & GANB012-040CBA PowerDescription
Nexperia GANB1R2-040QBA and GANB012-040CBA GaN HEMTs are 40V, 1.2mΩ or 12mΩ, bi-directional Gallium Nitride (GaN) High Electron-Mobility-Transistors (HEMTs). The GANB1R2-040QBA features a Very-Thin-Profile Quad Flat No-Lead package, while the GANB012-040CBA is available in a Wafer-Level Chip Scale package. Both devices deliver superior performance with ultra-low on-state resistance.
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Nexperia 74LVC157A/74LVC157A-Q100 SemiconductorsDescription
Nexperia 74LVC157A/74LVC157A-Q100 Quad 2-Input Multiplexers offer select (S) and enable E inputs, allowing for versatile data source selection. They are designed to operate with both 3.3V and 5V devices, making them suitable for mixed voltage applications. The devices are qualified per AEC-Q100 Grade 1, ensuring reliability in automotive environments.
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Vishay / Dale IHXL1500VZ-3A PassivesDescription
Vishay / Dale IHXL1500VZ-3A Automotive Through-Hole Inductors are AEC-Q200 qualified and feature a high temperature rating up to +155°C. These inductors handle high transient current spikes without saturation and are suitable for applications such as automotive high-current battery charging and brushless DC motors. The metal alloy construction provides excellent magnetic shielding and high thermal conductivity.
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Vishay / Dale IHXL2000VZ-3A PowerDescription
Vishay / Dale IHXL2000VZ-3A Automotive Through-Hole Inductors are AEC-Q200 qualified and feature a high temperature rating up to +155°C. These inductors handle high transient current spikes without saturation and are suitable for applications such as automotive high-current battery charging and brushless DC motors. The metal alloy construction provides excellent magnetic shielding and high thermal conductivity.
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Nexperia GANE7R0/GANE2R7/GANE1R8 SemiconductorsDescription
Nexperia GANE7R0/GANE2R7/GANE1R8 100V GaN FETs are general-purpose, normally off e-mode devices that deliver superior performance and very low on-state resistance. These FETs are ideal for high-power density and high-efficiency power conversion applications. They come in various packages suitable for different applications.
