EPC Space has introduced the EPC7030MSH, a 300 V radiation-hardened GaN FET designed to meet the increasing voltage and power demands of advanced satellite platforms. The new device delivers exceptional electrical performance for applications such as satellite power distribution, DC–DC conversion, and electric propulsion.
As next-generation satellites adopt higher voltage buses to support more capable payloads and solar arrays, the need for compact, efficient, and rad-hard components is rising. The EPC7030MSH directly addresses this demand with the lowest on-resistance and gate charge in its class, enabling improved efficiency and simplified thermal design under extreme conditions.
The device is qualified to operate at 300 V with LET = 63 MeV and up to 250 V at LET = 84.6 MeV, delivering the highest current rating among commercially available 300 V rad-hard GaN FETs. Housed in an FSMD-M hermetic surface-mount package optimized for conduction cooling and creepage distance, the EPC7030MSH is also fully compatible with existing GaN gate drivers—streamlining integration into current system architectures.
Target applications include front-end DC–DC converters in satellite power systems, high-voltage distribution modules, and compact propulsion systems. With its space-grade build and performance advantages over traditional silicon MOSFETs, the EPC7030MSH continues EPC Space’s mission to deliver reliable, scalable power solutions for harsh environments.
As the space industry shifts toward higher voltage architectures to meet power density requirements, GaN devices like the EPC7030MSH offer a significant step forward. Their ability to maintain efficiency under radiation exposure makes them particularly well suited to future satellite designs where both mass and thermal budgets are tightly constrained.
