As industrial equipment pushes toward higher efficiency and reduced footprint, wide bandgap semiconductors are becoming central to power system design. Toshiba has now expanded its silicon carbide (SiC) offering with three new 650V MOSFETs that use its 3rd generation chip technology.
The devices, TW027U65C, TW048U65C, and TW083U65C, are supplied in a compact TOLL package and are aimed at demanding power applications, from switched-mode supplies in servers and data centres to EV charging stations and photovoltaic inverters.
Compact Packaging With High-Speed Switching
One of the standout features of these devices is their packaging. Compared to conventional TO-247 types, the surface-mount TOLL package reduces volume by more than 80 percent. That miniaturisation directly boosts equipment power density and allows smaller supporting components such as resistors and inductors.
The 9-pin, 4-terminal TOLL design also supports a Kelvin connection for the signal source, reducing inductance and enabling faster switching. Toshiba reports that the TW048U65C achieves around 55 percent lower turn-on loss and 25 percent lower turn-off loss compared to its equivalent TO-247 device without Kelvin connection.
Electrical Characteristics
The new MOSFETs are built on Toshiba’s optimised 3rd generation SiC technology, which balances drift resistance and channel resistance to improve RDS(on) behaviour across temperature. They also deliver a low RDS(on) x Qgd figure of merit, which further reduces switching losses.
- Drain-source voltage rating: 650V
- Gate-source range: −10V to +25V
- Typical gate threshold: 3.0V to 5.0V
- High drain current capability for robust operation
These specifications give designers flexibility in gate drive design and ensure reliable performance in challenging thermal and electrical conditions.
Applications
The new MOSFETs are suited to a wide set of applications, including server and telecoms power supplies, UPS systems, renewable energy inverters, and EV charging. By cutting switching losses and reducing footprint, they provide a path to higher system efficiency and power density.
Outlook
Toshiba plans to continue growing its MOSFET portfolio, highlighting the role of SiC devices in next-generation power systems where compactness and efficiency are both critical.
Learn more and read the original article on www.toshiba.semicon-storage.com
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