Toshiba Electronics Europe has released the TPH2R70AR5, a 100 V N-channel power MOSFET designed to increase efficiency in switched-mode power supplies and DC-DC converters. Built on Toshiba’s latest U-MOS11-H process, the device delivers lower conduction and switching losses, making it well suited for data centre, telecom, and industrial power systems where efficiency and power density are key.
Improved Figures of Merit
Compared with the previous TPH3R10AQM based on the U-MOSX-H process, the new device lowers RDS(on) by around 8 %, achieving just 2.7 mΩ (max). Total gate charge is also 37 % lower at 52 nC, resulting in a 42 % improvement in the RDS(on) × Qg figure-of-merit. For designers, that means less switching loss and reduced drive requirements, which can translate into cooler operation or the ability to increase switching frequency for smaller magnetics.
Fast Recovery and Low Noise
The device also benefits from Toshiba’s lifetime control technology, which enhances body-diode performance. Reverse recovery charge is reduced to 55 nC (typ.) and recovery behaviour is faster and quieter, suppressing voltage spikes and improving overall switching waveforms. The RDS(on) × Qrr figure-of-merit improves by around 43 % versus the previous generation, further cutting energy loss during freewheeling intervals.
Compact Package and High Current Rating
The TPH2R70AR5 comes in the SOP Advance (N) package measuring just 5.15 mm × 6.1 mm, offering footprint compatibility with industry standards. Despite its compact size, it supports a drain current rating of 190 A at 25 °C and a channel temperature rating up to 175 °C, allowing designers to push power density while minimising cooling overhead.
Design Support and Availability
Toshiba provides both G0 and G2 SPICE models to help engineers verify performance and optimise designs quickly. Shipments of the TPH2R70AR5 have already begun, giving developers immediate access to begin prototyping high-efficiency power stages.
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