Nexperia has expanded its portfolio of 650 V gallium nitride power transistors with new 35 mΩ, 50 mΩ, and 70 mΩ devices. The portfolio is available in TO-247-3, TO-247-4, TOLL, and TOLT packages and targets power conversion applications including datacenter power supplies, battery energy storage systems, renewable energy equipment, and industrial motor drives.
The new devices are 650 V GaN FETs used in high-frequency power conversion systems. The expanded range provides multiple RDS(on) and package options across different power levels and cooling requirements.
35 mΩ, 50 mΩ And 70 mΩ Variants
The expanded portfolio introduces devices with on-resistance values of 35 mΩ, 50 mΩ, and 70 mΩ. Nexperia is offering the devices in four package options: TO-247-3, TO-247-4, TOLL, and TOLT.
The 35 mΩ and 70 mΩ variants are available now, while the 50 mΩ devices are scheduled to enter production during the third quarter of 2026.
The company says the combination of multiple RDS(on) classes and package options gives designers additional flexibility when balancing efficiency, thermal performance, and power density requirements.
AI Server Power Supply Applications
Nexperia highlights high-power LLC converter stages used in AI server power supplies as one application area for the portfolio. According to the company, replacing silicon devices with GaN in 10 kW to 12 kW server power supplies can improve full-load efficiency by approximately 0.8% to 1.2%. Nexperia also reports power-density increases of roughly 40% to 70%, driven by higher switching frequencies and reductions in passive component size.
Motor Drive Performance
The company also provides performance figures for industrial motor drive applications. In a typical 1 kW high-voltage motor drive, Nexperia states that GaN devices can reduce inverter losses by approximately 20% to 25%. The company reports efficiency improvements of around 1% to 1.5% compared with conventional silicon-based implementations.
Industry-Standard Package Options
The portfolio is built on Nexperia's GaN technology platform and combines the company's latest devices with several established package formats. Available options include through-hole TO-247-3 and TO-247-4 packages, alongside the surface-mount TOLL and TOLT formats. Nexperia states that the use of industry-standard footprints allows the devices to be integrated into existing power-system architectures while providing access to the switching characteristics of GaN technology.
Learn more and read the original announcement at www.nexperia.com
Technology Overview
Nexperia's 650 V GaN FET portfolio is available with RDS(on) values of 35 mΩ, 50 mΩ, and 70 mΩ. Devices are offered in TO-247-3, TO-247-4, TOLL, and TOLT packages for use in high-frequency power conversion systems including datacenter power supplies, industrial drives, and energy infrastructure.
Frequently Asked Questions
What RDS(on) options are available in Nexperia's 650 V GaN portfolio?
The expanded portfolio includes 35 mΩ, 50 mΩ, and 70 mΩ variants.
Which package options are available?
Devices are offered in TO-247-3, TO-247-4, TOLL, and TOLT package formats.
Which applications does Nexperia highlight for these devices?
Nexperia identifies AI server power supplies, battery energy storage systems, renewable energy equipment, telecom power supplies, and industrial motor drives as target applications.
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