Micro Commercial Components (MCC) has introduced the SICW30120DG5M-BP, a new 1200 V Silicon Carbide Schottky Barrier Diode rated for an average forward current of 30 A. The device uses Merged PiN Schottky (MPS) technology and is supplied in a TO-247AB package for high-voltage power conversion applications.
Alongside its 1200 V rating, MCC specifies zero reverse recovery current, a maximum forward voltage of 1.6 V and surge current capability up to 180 A. Target applications range from PFC and DC/DC conversion to industrial power supplies, solar inverters and energy storage systems.
Zero Reverse Recovery with 1.6 V Forward Voltage
The SICW30120DG5M-BP uses a SiC MPS structure, combining a Schottky contact with integrated PiN regions. For switching applications, one of the important characteristics is the absence of reverse recovery current associated with conventional silicon PN diodes.
MCC pairs this switching behaviour with a maximum forward voltage of 1.6 V. The diode is rated for 30 A average forward current and has a maximum reverse leakage current of 25 µA.
These characteristics put the new device into the type of high-voltage switching stages found in power factor correction circuits, switching power supplies and DC/DC converters, where both conduction and switching behaviour need to be considered.
180 A Surge Rating for High-Power Designs
The new SiC diode has a non-repetitive peak forward surge current rating of 180 A. This gives the device additional headroom for short-duration current events such as startup and inrush conditions.
Maximum junction temperature is 175°C, while the TO-247AB package provides a familiar through-hole format for high-power designs and heatsink mounting.
MCC is also targeting the SICW30120DG5M-BP at solar converters and inverters, battery charging and energy storage systems, UPS equipment, telecom power modules and server power supplies.
The SICW30120DG5M-BP is available now through MCC and its authorised distributors.
Learn more and read the original announcement at the MCC website.
Technology Overview
Merged PiN Schottky technology combines Schottky and PiN structures within a SiC diode. Under normal operation, the Schottky region provides the primary current path, while the PiN regions contribute during higher-current conditions. This approach allows SiC power diodes to retain fast switching characteristics while supporting higher surge currents.
Frequently Asked Questions
What are the main specifications of the MCC SICW30120DG5M-BP?
The SICW30120DG5M-BP is rated for 1200 V reverse voltage and 30 A average forward current. It has a maximum forward voltage of 1.6 V, 180 A surge current capability and a maximum junction temperature of 175°C.
Does the SICW30120DG5M-BP have reverse recovery current?
MCC specifies zero reverse recovery current for the new SiC Schottky Barrier Diode.
What applications is the SICW30120DG5M-BP intended for?
MCC lists applications including PFC circuits, SMPS, DC/DC converters, solar inverters, energy storage systems, UPS equipment, battery chargers and industrial power supplies.
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