Efficient Power Conversion (EPC) has started mass production of the EPC2370, an 18 V enhancement-mode GaN FET developed for high-current DC/DC converters in AI server power supplies and other high-performance computing systems.
Built on EPC's seventh-generation GaN platform, the EPC2370 has a typical RDS(on) of 0.28 mΩ, a continuous current rating of 101 A and 26 nC gate charge. The device has an 18 V continuous voltage rating and a 22 V transient rating, and comes in a 3.3 mm × 3.3 mm thermally enhanced, dual-side-cooled PQFN package.
The FET is designed for switching at 1 MHz and above, with EPC targeting high-density power conversion architectures that require high current at low output voltages.
48 V-to-6 V and 800 V-to-6 V Power Conversion
EPC has optimized the EPC2370 for center-tapped synchronous rectification in 48 V-to-6 V and 800 V-to-6 V power converters. The company developed the device specifically for 6 V output, high-current synchronous rectification in AI server power architectures.
Its 22 V transient voltage rating provides additional margin above the 18 V continuous rating. EPC says this allows the device to replace MOSFETs with ratings as high as 25 V.
The company reports peak efficiencies of 98% and full-load efficiencies of 97% in high-density power modules using the EPC2370. Beyond AI server power supplies, target applications include high-current DC/DC converters for high-performance computing, telecommunications infrastructure and industrial power systems.
Dual-Side-Cooled PQFN Package
The EPC2370 is supplied in a 3.3 mm × 3.3 mm PQFN package designed for dual-side cooling. The combination of 0.28 mΩ typical RDS(on), 26 nC gate charge and the thermally enhanced package is intended for converters where both conduction and switching losses need to be managed at high current.
EPC positions the new device alongside its EPC2305, EPC2367 and EPC2361 primary-side GaN switches for high-density power conversion.
For evaluation, the EPC90168 board uses two EPC2370 GaN FETs configured as a half bridge. The 2 × 2-inch board includes the supporting components and provides multiple probe points for waveform measurements and efficiency evaluation.
The EPC2370 is in mass production and available through EPC's distribution network. The company lists pricing at $2.52 each in quantities of 1,000. The EPC90168 evaluation board is available for $260.
Learn more and read the original announcement at epc-co.com.
Technology Overview
The EPC2370 is an 18 V enhancement-mode GaN power transistor designed for high-current, low-voltage DC/DC conversion. Its 0.28 mΩ typical RDS(on) addresses conduction losses, while the 26 nC gate charge and GaN construction support high-frequency switching. EPC is targeting the device at center-tapped synchronous rectification in converters producing 6 V outputs, including 48 V-to-6 V and 800 V-to-6 V power architectures.
FAQ
What is the EPC2370?
The EPC2370 is an 18 V enhancement-mode GaN FET from EPC with a 22 V transient rating, 0.28 mΩ typical RDS(on), 101 A continuous current rating and 26 nC gate charge.
What applications is the EPC2370 designed for?
The FET is optimized for center-tapped synchronous rectification in 48 V-to-6 V and 800 V-to-6 V converters. Target applications include AI server power supplies, high-performance computing, telecommunications infrastructure and industrial power systems.
Is an evaluation board available for the EPC2370?
Yes. The EPC90168 is a 2 × 2-inch evaluation board containing two EPC2370 GaN FETs configured as a half bridge, with multiple probe points for waveform measurements and efficiency evaluation.
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