ROHM has launched the RS4P063BPHZG, a 100 V N-channel MOSFET designed for automotive safety functions and protection circuits exposed to short-duration high-power loads.
The new MOSFET is designed to suppress secondary breakdown and maintain a wide safe operating area (SOA) across a broad voltage range. At VDS = 100 V and a pulse width of 100 µs, ROHM says the RS4P063BPHZG offers approximately five times the SOA tolerance of standard products in an equivalent package size.
Applications include airbag inflator ignition circuits, seatbelt pretensioner drive circuits and pyro-fuse drive circuits used for battery cutoff.
Wide SOA Targets Short-Duration High-Power Loads
Safety and protection circuits can place very different demands on a MOSFET from those encountered during normal switching operation. During an abnormal or emergency condition, the device may be required to handle high voltage and current simultaneously for a short period. Under these conditions, secondary breakdown can occur when current flowing at high applied voltage becomes concentrated in localized areas of the device. The resulting heating can cause the MOSFET to fail even when operation appears to be within its headline voltage and current ratings.
ROHM developed the RS4P063BPHZG to suppress this effect and maintain safe operation across a wider combination of voltage and current. The approximately fivefold SOA improvement quoted by ROHM applies specifically at 100 V VDS with a 100 µs pulse, rather than representing a general increase across every operating condition.
That capability is aimed at circuits that may only operate briefly but need to work reliably when called upon, including the firing circuits used for airbags and seatbelt pretensioners and the circuitry controlling pyro-fuses for battery isolation.
120 A MOSFET in a 5060-Size Package
The RS4P063BPHZG has a 100 V drain-source voltage rating and 120 A drain current rating. Typical RDS(on) is 4.9 mΩ with a 10 V gate drive, rising to a specified maximum of 6.3 mΩ. Total gate charge is 55 nC.
ROHM packages the device in its HPLF5060, a standard 5060-size package used in automotive applications. Keeping the new Wide-SOA MOSFET within this established footprint can simplify evaluation in designs already using similarly sized devices, rather than requiring a larger package simply to increase tolerance to short-duration power stress.
The RS4P063BPHZG is AEC-Q101 qualified for automotive use. Mass production began in June 2026, and the device is available through distributors including DigiKey and Farnell.
Learn more and read the original announcement at rohm.com.
Technology Overview
The ROHM RS4P063BPHZG is a 100 V, 120 A N-channel MOSFET designed with a wide safe operating area for automotive safety and protection circuits. ROHM specifies approximately five times the SOA tolerance of standard equivalent-size products at 100 V VDS and a 100 µs pulse width.
FAQs
What is the RS4P063BPHZG designed for?
It targets automotive safety and protection circuits including airbag inflator ignition, seatbelt pretensioner and pyro-fuse battery cutoff circuits.
What is notable about its safe operating area?
ROHM designed the MOSFET to suppress secondary breakdown. At VDS = 100 V and PW = 100 µs, the company specifies approximately five times the SOA tolerance of standard equivalent-size products.
What are the main electrical specifications?
The RS4P063BPHZG is rated for 100 V and 120 A, with typical RDS(on) of 4.9 mΩ at a 10 V gate drive and total gate charge of 55 nC.
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