IXYS IXSH65N120L3KHV 1200 V 67 A SiC MOSFET

Introduction

The IXYS IXSH65N120L3KHV is a high-voltage silicon carbide MOSFET designed for efficient, high-power switching applications. Rated for 1200 V and 67 A continuous drain current, it is suited to modern power-conversion designs where switching speed, thermal performance, and reduced energy loss are important.

Part Description

The IXSH65N120L3KHV is a single N-channel SiC MOSFET supplied in a TO-247-4L through-hole package. Its silicon carbide construction provides advantages over conventional silicon power MOSFETs and IGBTs, including faster switching capability, low switching losses, and strong high-voltage performance.

A key feature of the four-lead TO-247 package is its Kelvin source connection. This separate source return can reduce common-source inductance in the gate-drive loop, helping improve switching behavior, minimize ringing, and support more accurate gate control in high-speed power circuits.

With a 1200 V drain-source rating and 67 A continuous drain-current capability, the device is appropriate for demanding power stages such as inverters, converters, chargers, and industrial motor-control systems. Its low on-state resistance also helps reduce conduction losses and improve overall converter efficiency.

Applications

Potential applications for the IXSH65N120L3KHV include:

• High-voltage DC-DC converters
• Solar inverter power stages
• Energy-storage converters
• Electric vehicle charging equipment
• On-board and off-board battery chargers
• Industrial motor drives
• Variable-frequency drives
• Uninterruptible power supplies
• Power-factor-correction circuits
• Switched-mode power supplies
• Welding power supplies
• Induction heating equipment
• High-power resonant converters
• Railway auxiliary power systems

Industries

This SiC MOSFET can be used across a range of industries, including:

• Renewable energy
• Electric vehicle infrastructure
• Automotive electrification
• Industrial automation
• Manufacturing equipment
• Energy storage
• Power distribution
• Transportation and rail
• Aerospace and defense power systems
• Telecommunications infrastructure
• Data-center power systems
• Consumer and commercial charging equipment

Usage Ideas

1. 1200 V Solar String Inverter
   Use the MOSFET in a high-frequency inverter bridge for converting solar-panel DC power into grid-compatible AC power.

2. EV Fast-Charger DC-DC Stage
   Build an isolated high-power DC-DC converter using SiC switching devices to improve charger efficiency and reduce magnetics size.

3. Industrial Three-Phase Motor Drive
   Integrate the device into inverter legs for a variable-frequency motor controller used in pumps, fans, compressors, or conveyors.

Conclusion

The IXYS IXSH65N120L3KHV is a 1200 V, 67 A N-channel SiC MOSFET intended for efficient high-voltage power switching. Its low on-state resistance, fast switching performance, and Kelvin source connection make it a strong choice for designers developing compact, high-efficiency converters, inverters, motor drives, and charging systems.