N-Channel E-Mode Field Effect Transistors


N-Channel E-Mode Field Effect Transistors

Manufacturer

Part #

Category

Diodes Incorporated 2N7002 Semiconductors

Description

Diodes Incorporated 2N7002 N-Channel Enhancement-Mode Field Effect Transistors (FETs) are designed for low-voltage switching applications. These devices feature a maximum drain-source voltage of 60V and a continuous drain current ranging from 105mA to 210mA. Housed in a compact SOT-23 package, they offer fast switching performance suitable for various applications.

Diodes Incorporated 2N7002 N-Channel E-Mode Field Effect Transistors

Introduction

The Diodes Incorporated 2N7002 is a highly efficient N-Channel Enhancement-Mode Field Effect Transistor (FET) designed for low-voltage switching applications. With its compact SOT-23 package, this transistor is ideal for space-constrained designs while delivering impressive performance.

Part Description

The 2N7002 FET features a maximum drain-source voltage of 60V and a continuous drain current range of 105mA to 210mA. It is characterized by low on-resistance, fast switching speeds, and low gate charge, making it suitable for various applications including signal processing and load switching. The device is also RoHS-compliant and lead-free, ensuring it meets modern environmental standards. Its small size and efficient design make it a popular choice for high-density circuit applications.

Applications

  • Motor controls
  • Power-management functions
  • Signal processing
  • Load switching
  • Level shifting

Industries

  • Consumer electronics
  • Automotive
  • Industrial automation
  • Telecommunications
  • Renewable energy systems

Usage Ideas

  1. Motor Control Circuit: Use the 2N7002 to create a motor control circuit for small DC motors in robotics projects, allowing for precise speed and direction control.
  2. LED Driver: Implement the 2N7002 in an LED driver circuit to manage the brightness of LED strips, utilizing PWM (Pulse Width Modulation) for dimming effects.
  3. Power Management System: Design a power management system that uses the 2N7002 to switch power to various components in a battery-operated device, enhancing efficiency and extending battery life.

Conclusion

The Diodes Incorporated 2N7002 N-Channel E-Mode FET is a versatile and efficient component suitable for a wide range of low-voltage applications. Its compact design, fast switching capabilities, and environmental compliance make it an excellent choice for engineers and hobbyists alike, paving the way for innovative projects across various industries.