IXYS IXSH110N120L3KHV SiC MOSFET

Introduction

The IXYS IXSH110N120L3KHV is a high-voltage silicon carbide (SiC) MOSFET designed for efficient, fast-switching power conversion systems. With a 1200 V rating, high continuous current capability, and low on-state resistance, it is well suited to demanding high-power designs where efficiency, power density, and thermal performance are important.

Part Description

The IXSH110N120L3KHV is a third-generation SiC power MOSFET from IXYS. It supports up to 1200 V drain-to-source voltage and a continuous drain current of 112 A. Its typical on-state resistance is 18 mΩ, helping reduce conduction losses in high-current switching applications.

Key characteristics include:

• 1200 V drain-to-source voltage rating
• 112 A continuous drain current capability
• 18 mΩ typical on-state resistance
• Silicon carbide MOSFET technology
• Fast switching behavior for high-frequency power converters
• Low capacitance, supporting lower switching losses
• Ultra-fast intrinsic body diode
• Kelvin source connection for improved gate-drive performance and reduced switching losses
• Suitable for compact, high-efficiency power electronics designs

Applications

Potential applications for the IXSH110N120L3KHV include:

• Electric vehicle onboard chargers
• EV fast-charging power stages
• Traction and auxiliary motor drives
• High-voltage DC/DC converters
• Solar inverter power stages
• Energy-storage converters
• Switch-mode power supplies
• Uninterruptible power supplies
• Power-factor-correction circuits
• Industrial welding equipment
• High-power battery charging systems
• Induction heating equipment

Industries

This SiC MOSFET can be used across several industries, including:

• Electric vehicles and transportation
• Renewable energy
• Energy storage
• Industrial automation
• Power distribution and conversion
• Telecommunications infrastructure
• Data centers
• Aerospace and defense power systems
• Railway and electrified transport
• Consumer and commercial power equipment

Usage Ideas

1. High-Efficiency EV Charger
   Use the MOSFET in a high-voltage DC/DC conversion stage for an onboard or offboard electric vehicle charger.

2. Solar Inverter Switching Stage
   Build a compact solar inverter power stage that benefits from the device’s fast switching and low conduction losses.

3. Three-Phase Motor Drive
   Integrate the MOSFET into an inverter bridge for controlling an industrial motor, pump, compressor, or electric drivetrain subsystem.

Conclusion

The IXYS IXSH110N120L3KHV is a capable 1200 V SiC MOSFET for high-power switching applications. Its low typical on-state resistance, 112 A current capability, fast switching characteristics, and Kelvin source connection make it a strong option for designers developing efficient EV chargers, inverters, motor drives, DC/DC converters, and other advanced power-conversion systems.