650V 30mΩ GaN FETs by Renesas Electronics

Introduction

The Renesas Electronics TP65H030G4Px is a high-performance 650V Gallium Nitride (GaN) FET designed for a variety of demanding applications. Utilizing the advanced Gen IV Plus SuperGaN® platform, these FETs provide exceptional performance and reliability, making them an ideal choice for modern power systems.

Part Description

The TP65H030G4Px features an on-state resistance of 30mΩ, making it highly efficient for power applications. It is available in multiple package types, including TOLT, TO247, and TOLL, which facilitate easy integration into various designs. The FETs leverage a unique architecture that combines a high-voltage GaN HEMT with a low-voltage silicon MOSFET, ensuring compatibility with standard silicon drivers. This design not only enhances performance but also simplifies the adoption of GaN technology for system developers.

Applications

• Data center and server infrastructure
• Power supply systems
• Uninterruptible Power Supplies (UPS)
• Battery Energy Storage Systems (BESS)
• E-mobility charging infrastructure
• Solar inverters
• DC/DC converters (both unidirectional and bidirectional)
• Power Factor Correction (PFC) and inverter stages in industrial applications

Industries

• Telecommunications
• Renewable energy
• Electric vehicles and charging stations
• Data centers
• Industrial automation
• Consumer electronics

Usage Ideas

1. High-Efficiency Power Supply: Design a compact power supply unit for a server application that utilizes the TP65H030G4Px to achieve high efficiency and reduced thermal management requirements.

2. E-Mobility Charging Station: Create a fast-charging station for electric vehicles that leverages the GaN FETs to minimize charging time while maximizing energy efficiency.

3. Solar Inverter Project: Develop a solar inverter that incorporates the TP65H030G4Px to enhance the conversion efficiency of solar energy into usable power for residential or commercial applications.

Conclusion

The Renesas Electronics TP65H030G4Px 650V 30mΩ GaN FETs represent a significant advancement in power semiconductor technology. With their superior performance, reliability, and versatility, they are well-suited for a wide range of applications across various industries. Whether in renewable energy, telecommunications, or e-mobility, these GaN FETs are poised to drive innovation and efficiency in modern power systems.