1-Channel Gate Driver
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Part #
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ROHM Semiconductor BM6GD11BFJ-LB PowerDescription
The ROHM Semiconductor BM6GD11BFJ-LB 1-Channel Gate Driver is designed for driving GaN HEMTs at high speeds with built-in isolation. It features a 2500V RMS isolation voltage and a maximum input/output delay time of 60ns. This gate driver is suitable for applications in industrial equipment, AC adapters, and server power supplies.
ROHM Semiconductor BM6GD11BFJ-LB 1-Channel Gate Driver
Introduction
The ROHM Semiconductor BM6GD11BFJ-LB is a high-performance 1-channel gate driver specifically designed for driving Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs) at high speeds. With built-in isolation features, this component is ideal for various power applications requiring efficient and reliable performance.
Part Description
The BM6GD11BFJ-LB gate driver boasts a remarkable 2500V RMS isolation voltage, ensuring safe operation in demanding environments. It has a maximum input/output delay time of just 60ns and a minimum input pulse width of 65ns, making it suitable for high-speed applications. The device includes an Under-Voltage Lockout (UVLO) function on both the input and output sides, enhancing its reliability. It comes in a compact SOP-JW8 package with dimensions of 4.9mm x 6mm x 1.65mm, making it easy to integrate into various designs.

Applications
- Industrial equipment
- GaN HEMT gate drives
- AC adapters
- Server power supplies
Industries
- Electronics manufacturing
- Renewable energy
- Telecommunications
- Automotive
- Industrial automation
Usage Ideas
- High-Speed Power Supply Design: Utilize the BM6GD11BFJ-LB to create a high-efficiency power supply for server applications, ensuring rapid switching and minimal delay.
- Electric Vehicle Charging Station: Implement the gate driver in an electric vehicle charging station to manage the power conversion efficiently, leveraging its isolation and speed capabilities.
- Renewable Energy Inverter: Design an inverter for solar energy systems using the BM6GD11BFJ-LB to drive GaN HEMTs, enhancing the overall efficiency and performance of the energy conversion process.
Conclusion
The ROHM Semiconductor BM6GD11BFJ-LB 1-Channel Gate Driver is a versatile and reliable component for high-speed applications involving GaN HEMTs. Its robust features, including high isolation voltage and fast response times, make it an excellent choice for various industries and applications. Whether in industrial equipment, power supplies, or renewable energy systems, this gate driver is poised to deliver exceptional performance and efficiency.