IXYS IXSH150N120L3KHV SiC MOSFET

Introduction

The IXYS IXSH150N120L3KHV is a high-performance silicon carbide (SiC) MOSFET designed for demanding high-voltage power-switching applications. With a 1200 V rating, high continuous current capability, and low on-state resistance, it supports efficient power conversion in modern industrial, renewable-energy, transportation, and charging systems.

Part Description

The IXSH150N120L3KHV is a third-generation SiC MOSFET from IXYS. It can handle up to 1200 V drain-to-source voltage and supports a continuous drain current of up to 147 A. Its typical on-state resistance of 13.5 mΩ helps reduce conduction losses, especially in high-current designs.

Silicon carbide technology provides significant advantages over conventional silicon MOSFETs and IGBTs in high-voltage switching circuits. This device offers fast switching performance, low capacitance, and an ultra-fast intrinsic body diode, enabling lower switching losses and improved efficiency at elevated switching frequencies.

A Kelvin source connection is included to support improved gate-drive performance. By separating the power source connection from the gate-drive source return, the Kelvin source helps minimize common-source inductance and can reduce switching noise, voltage overshoot, and power loss.

Applications

Potential applications for the IXSH150N120L3KHV include:

• Electric vehicle onboard chargers
• DC fast-charging power stages
• Traction inverters
• Industrial motor drives
• High-voltage DC/DC converters
• Solar string inverters
• Energy storage system converters
• Switch-mode power supplies
• Uninterruptible power supplies
• Power-factor-correction stages
• Induction heating systems
• High-power battery charging equipment

Industries

This SiC MOSFET may be used in the following industries:

• Electric vehicle and transportation
• Renewable energy
• Solar power generation
• Energy storage
• Industrial automation
• Factory equipment
• Power distribution
• Telecommunications infrastructure
• Data centers
• Aerospace and defense power systems
• Commercial charging infrastructure
• Consumer and commercial power electronics

Usage Ideas

1. High-Efficiency EV Charger
   Use the MOSFET in a high-frequency DC/DC conversion stage for an electric vehicle onboard charger or charging station.

2. Solar Inverter Power Stage
   Build a high-voltage inverter leg for converting solar-panel DC power into grid-compatible AC power.

3. Industrial Motor Drive
   Design a three-phase inverter for controlling a high-power industrial motor, taking advantage of the device’s low switching and conduction losses.

Conclusion

The IXYS IXSH150N120L3KHV is a robust 1200 V SiC MOSFET intended for high-current, high-efficiency switching applications. Its low 13.5 mΩ typical on-state resistance, 147 A continuous drain-current capability, fast switching characteristics, and Kelvin source connection make it well suited to advanced power-conversion systems. It is particularly valuable in EV charging, motor drives, solar inverters, DC/DC converters, and other applications where compact design, high power density, and reduced energy loss are important.