IXYS IXSH100N120L3KHV 1200V SiC MOSFET

Introduction

The IXYS IXSH100N120L3KHV is a high-voltage silicon carbide (SiC) power MOSFET designed for efficient, fast-switching power-conversion systems. With a 1200 V rating, 102 A continuous drain-current capability, and low on-state resistance, it is well suited to demanding high-power applications.

Part Description

The IXSH100N120L3KHV is a third-generation SiC MOSFET from IXYS. It provides a typical on-state resistance of 21 mΩ, helping reduce conduction losses in high-current switching circuits.

Key characteristics include:

• 1200 V drain-to-source voltage rating
• 102 A continuous drain current capability
• 21 mΩ typical on-state resistance
• Fast switching performance for higher-frequency conversion
• Low device capacitance to reduce switching losses
• Ultra-fast intrinsic body diode
• Kelvin source connection for improved gate-drive performance and reduced parasitic-inductance effects

Its SiC construction enables operation with lower switching losses and potentially higher switching frequencies than conventional silicon power MOSFETs or IGBTs in appropriate designs.

Applications

Potential applications for the IXSH100N120L3KHV include:

• Electric vehicle charging stations
• High-power DC/DC converters
• Three-phase motor drives
• Solar photovoltaic inverters
• Energy-storage power converters
• Switch-mode power supplies
• Uninterruptible power supplies
• High-voltage battery-management and power-distribution systems
• Industrial welding equipment
• Power-factor-correction stages

Industries

This MOSFET can support products across several industries:

• Electric vehicle and charging infrastructure
• Renewable energy and solar power
• Industrial automation
• Power generation and distribution
• Energy storage systems
• Transportation and rail electrification
• Telecommunications power equipment
• Data-center power systems
• Aerospace and defense power electronics
• Consumer and commercial power-conversion equipment

Usage Ideas

1. EV Fast Charger Power Stage
   Use the MOSFET in a high-frequency DC/DC conversion stage for an EV charging system, where low switching loss can improve efficiency and reduce cooling requirements.

2. Solar Inverter Switching Bridge
   Build a high-voltage inverter leg for converting solar-panel DC power into AC power for commercial or utility-scale photovoltaic installations.

3. Industrial Motor Drive
   Design a three-phase inverter for controlling a high-power industrial motor, using the Kelvin-source connection to support clean, fast gate-drive switching.

Conclusion

The IXYS IXSH100N120L3KHV is a robust 1200 V SiC MOSFET for high-voltage, high-current power-conversion designs. Its low on-state resistance, fast switching behavior, low capacitance, and Kelvin source connection make it a strong option for efficient EV chargers, motor drives, solar inverters, DC/DC converters, and other advanced power-electronics systems.