ROHM Semiconductor SCT2H12NWB 1700V N-Channel SiC Power MOSFET

Introduction

The ROHM Semiconductor SCT2H12NWB is a high-performance 1700V N-Channel SiC Power MOSFET designed for demanding power applications. With its impressive specifications and features, this MOSFET is ideal for engineers looking to enhance the efficiency and reliability of their power systems.

Part Description

The SCT2H12NWB features a continuous drain current rating of 3.9A and a low on-state resistance of just 1.15mΩ, making it suitable for fast switching applications. It operates at a drain-source voltage (VDSS) of 1700V, ensuring robust performance in high-voltage environments. The device comes in a compact TO-263CA package, measuring 15.5mm x 10.2mm, and is designed for easy integration into various circuit designs. Its fast switching speed and wide creepage distance further enhance its usability in auxiliary and switch-mode power supply applications.

Applications

• Auxiliary power supplies
• Switch-mode power supplies

Industries

• Consumer electronics
• Renewable energy systems
• Industrial automation
• Electric vehicles
• Telecommunications

Usage Ideas

1. Solar Inverter Design: Utilize the SCT2H12NWB in a solar inverter circuit to efficiently convert DC from solar panels to AC for household use.
2. Electric Vehicle Charger: Implement this MOSFET in an electric vehicle charging station to manage high-voltage power conversion with minimal losses.
3. High-Efficiency Power Supply: Create a compact switch-mode power supply for consumer electronics that requires high efficiency and reliability.

Conclusion

The ROHM Semiconductor SCT2H12NWB 1700V N-Channel SiC Power MOSFET is a versatile and efficient component suitable for a wide range of applications in various industries. Its low on-state resistance, fast switching capabilities, and robust design make it an excellent choice for engineers looking to improve power management in their projects.