Renesas has expanded its wide-bandgap power portfolio with the launch of three new 650V GaN FETs optimised for high-density, high-efficiency power systems. Targeting AI data centres, server power supplies, EV charging infrastructure, UPS, energy storage, and solar inverters, the new Gen IV Plus devices are engineered for multi-kilowatt-class applications and offer significant improvements in size, thermal performance, and ease of integration.
The TP65H030G4PRS, TP65H030G4PWS, and TP65H030G4PQS devices are built on Renesas’ SuperGaN® platform, a field-proven depletion-mode (d-mode), normally-off architecture originally developed by Transphorm, which Renesas acquired in 2024. These devices combine the switching efficiency of GaN with the simplicity of silicon FET gate driving, allowing system designers to use standard off-the-shelf drivers without compromising performance.
Compared to the previous generation, the Gen IV Plus die is 14% smaller and delivers a lower RDS(on) of just 30mΩ, a 14% improvement. It also offers a 20% better output capacitance product FOM. This results in reduced conduction and switching losses, enabling smaller, more efficient power designs.
Engineers can choose from TOLT, TO-247, and TOLL package options, giving them flexibility in thermal management and board layout design. The TO-247 variant offers high thermal capability, while the surface-mount TOLL and TOLT formats support both bottom- and top-side cooling. This packaging diversity supports power system designs from 1kW to beyond 10kW.
The new FETs are fully compatible with existing Gen IV designs, allowing for straightforward upgrades that preserve previous engineering investment. They also provide a higher 4V threshold voltage, improving noise immunity and robustness over e-mode GaN alternatives.
“This launch is the first major milestone since we acquired Transphorm,” said Primit Parikh, Vice President of Renesas’ GaN Business Division. “Our future roadmap includes integrating these FETs with Renesas drivers and controllers to offer fully optimised power platforms.”
Renesas is one of the few semiconductor companies offering both high and low power GaN solutions, enabling it to serve a broad range of industrial and infrastructure applications. With over 20 million GaN units shipped and more than 300 billion cumulative hours of operation, the company brings deep field experience to next-generation power conversion.
To support developers, Renesas has also released the 4.2kW Totem-Pole PFC GaN Evaluation Kit (RTDTTP4200W066A-KIT).
The Gen IV Plus series builds on Renesas' SuperGaN platform with smaller die sizes, improved thermal performance, and flexible packaging options. With compatibility for standard gate drivers and strong efficiency gains, the devices offer engineers a straightforward upgrade for next-generation power systems.
Learn more and read the original article at Renesas.
