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Filtering by tag: "Power Electronics"
Clear tag filterToshiba Introduces 80V Power MOSFET with 1.4mΩ On-Resistance for Industrial Power Supplies
Toshiba has introduced the TPM1R408RH, an 80V N-channel power MOSFET featuring 1.4mΩ maximum RDS(on), a 45% improved figure-of-merit, and a compact SOP Advance(E) package for high-efficiency industrial SMPS applications.
Read MoreMelexis Introduces Digital Current Sensor for High-Power EV Systems
Melexis has introduced the MLX91229 Hall-effect current sensor with a sigma-delta digital output for 200A to 2000A automotive current sensing in traction inverter and EV applications.
Read MorePanasonic Introduces HE-S SC Relays for Single-Phase EV Chargers
Panasonic Industry has introduced the HE-S SC relay family for single-phase EV charging systems, offering 40A switching, IEC 62955 short-circuit compliance, 400mW coil holding power, and optional mirror-contact monitoring.
Read MoreWürth Elektronik Adds Nanocrystalline Cable Cores for EMI Suppression
Würth Elektronik has introduced the WE-NCC series of nanocrystalline cable cores for EMI suppression, offering permeability from 30,000 to 90,000, cable diameters up to 21.1 mm, and higher low-frequency impedance than conventional ferrite cores.
Read MoreYAGEO SMP253 SMD Y2 Capacitors Target EMI Filtering in Power Electronics
YAGEO's SMP253 series is a 310 VAC Class Y2 surface-mount safety capacitor family for line-to-earth EMI suppression. The capacitors support up to +125°C operation, AEC-Q200 qualification, and capacitance values from 1 nF to 68 nF.
Read MoreEPC Introduces 23 mm GaN Inverter for Robots and Drones
EPC has introduced the EPC91132, a 23 mm diameter GaN-based BLDC motor drive inverter for drones and humanoid robots. Built around the EPC33110 power module, the design delivers 11 ARMS continuous current at 48 V and supports PWM frequencies up to 100 kHz.
Read MoreNexperia Expands 650 V GaN FET Portfolio for High-Power Designs
Nexperia has expanded its 650 V GaN FET portfolio with 35 mΩ, 50 mΩ, and 70 mΩ devices in TO-247, TOLL, and TOLT packages. The devices target AI server power supplies, industrial drives, telecom systems, renewable energy, and battery energy storage applications.
Read MoreNavitas Introduces Isolated TO-247 Package for SiC MOSFETs
Navitas has launched the UHV-TO-247-4-ISO package for 1200 V, 2300 V, and 3300 V GeneSiC MOSFETs. The package combines integrated 6000 V isolation with direct-cooled thermal management, reducing thermal resistance by up to 60% and increasing power dissipation capability by up to 150%.
Read Moreonsemi Launches GaNEXUS GaN Power Portfolio
onsemi has introduced the GaNEXUS gallium nitride power portfolio, featuring 40 V to 650 V GaN FETs and 650 V Smart devices with integrated protection. The family targets AI data centers, industrial automation, robotics, EV charging, and energy infrastructure applications.
Read MoreNexperia Brings QDPAK Packaging to 1200 V SiC MOSFETs
Nexperia has introduced 1200 V SiC MOSFETs in QDPAK top-side cooled packaging. The portfolio includes 17 mΩ to 80 mΩ variants, delivers up to 3 kW higher output power than D2PAK-7 devices, and targets EV, industrial, renewable energy, and datacenter power systems.
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