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EPC’s First Gen 7 eGaN FET Pushes Power Density in 40 V Designs

EPC’s new 40 V Gen 7 eGaN transistor offers low RDS(on) and reduced switching loss for compact, high efficiency power stages.

EPC, Efficient Power Conversion, EPC2366, GaN FET, eGaN transistor, Gen 7 GaN, 40 V FET, low RDSon, QG, synchronous rectification, DC DC conversion, AI servers, motor drives, power electronics, high density power, PQFN package

EPC’s First Gen 7 eGaN FET Pushes Power Density in 40 V Designs

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