Navitas
@navitasNavitas Semiconductor designs GaNFast and GeneSiC power semiconductors that deliver high-efficiency energy conversion for applications spanning AI data centres, EVs, and renewable systems.
Articles by Navitas
Navitas Introduces Isolated TO-247 Package for SiC MOSFETs
Navitas has launched the UHV-TO-247-4-ISO package for 1200 V, 2300 V, and 3300 V GeneSiC MOSFETs. The package combines integrated 6000 V isolation with direct-cooled thermal management, reducing thermal resistance by up to 60% and increasing power dissipation capability by up to 150%.
Read article →Navitas Pushes 800 VDC Directly to 6 V in AI Power
Navitas introduces an 800 VDC to 6 V power delivery board that removes the intermediate bus stage, enabling direct high-voltage to low-voltage conversion for AI data center power systems.
Read article →Navitas GeneSiC SiC MOSFETs Add QDPAK and Low-Profile TO-247
Navitas expands its 5th-generation GeneSiC silicon carbide MOSFET portfolio with top-side cooled QDPAK and low-profile TO-247-4L packages designed for AI data centers, grid infrastructure, and industrial power systems operating at 1200 V.
Read article →Navitas GeneSiC 5th Gen SiC MOSFET Improves Switching Loss
Navitas 5th generation GeneSiC 1200V SiC MOSFET platform improves RDS(on) × QGD figure of merit, soft body diode behavior, and reliability for AI data centers, grid infrastructure, and industrial power conversion.
Read article →Navitas’ 10 kW GaN Converter Pushes HVDC Data Centers Toward Higher Power Density
Navitas’ 10 kW GaN based DC DC converter delivers 98.5 percent peak efficiency and high power density for 800 V DC and plus minus 400 V DC data centers, supporting fast switching and dynamic AI workloads.
Read article →Navitas and Cyient Partnership Aims to Strengthen India’s GaN Ecosystem
Partnership aims to build a complete GaN ecosystem for high power designs in India.
Read article →Navitas Introduces 3300 V and 2300 V UHV SiC Platform For Demanding Power Systems
Navitas adds 3300 V and 2300 V SiC devices with advanced field control and robust packaging for demanding high voltage power systems.
Read article →GlobalFoundries and Navitas Advance U.S. GaN Manufacturing for AI Datacenters and High-Power Systems
GlobalFoundries and Navitas form a long-term partnership to expand U.S. GaN technology and manufacturing for AI datacenters, energy and high-power systems.
Read article →Navitas Expands GaN and SiC Power Devices for 800 V AI Data Centres
Navitas extends its GaNFast and GeneSiC semiconductor portfolio to support NVIDIA’s 800 V AI data-centre architecture with higher efficiency and density.
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