Component Club author

Navitas

@navitas

Navitas Semiconductor designs GaNFast and GeneSiC power semiconductors that deliver high-efficiency energy conversion for applications spanning AI data centres, EVs, and renewable systems.

Published work

Articles by Navitas

Browse news
article image

Navitas Introduces Isolated TO-247 Package for SiC MOSFETs

Navitas has launched the UHV-TO-247-4-ISO package for 1200 V, 2300 V, and 3300 V GeneSiC MOSFETs. The package combines integrated 6000 V isolation with direct-cooled thermal management, reducing thermal resistance by up to 60% and increasing power dissipation capability by up to 150%.

Read article
article image

Navitas Pushes 800 VDC Directly to 6 V in AI Power

Navitas introduces an 800 VDC to 6 V power delivery board that removes the intermediate bus stage, enabling direct high-voltage to low-voltage conversion for AI data center power systems.

Read article
article image

Navitas GeneSiC SiC MOSFETs Add QDPAK and Low-Profile TO-247

Navitas expands its 5th-generation GeneSiC silicon carbide MOSFET portfolio with top-side cooled QDPAK and low-profile TO-247-4L packages designed for AI data centers, grid infrastructure, and industrial power systems operating at 1200 V.

Read article
article image

Navitas GeneSiC 5th Gen SiC MOSFET Improves Switching Loss

Navitas 5th generation GeneSiC 1200V SiC MOSFET platform improves RDS(on) × QGD figure of merit, soft body diode behavior, and reliability for AI data centers, grid infrastructure, and industrial power conversion.

Read article
article image

Navitas’ 10 kW GaN Converter Pushes HVDC Data Centers Toward Higher Power Density

Navitas’ 10 kW GaN based DC DC converter delivers 98.5 percent peak efficiency and high power density for 800 V DC and plus minus 400 V DC data centers, supporting fast switching and dynamic AI workloads.

Read article
image

Navitas and Cyient Partnership Aims to Strengthen India’s GaN Ecosystem

Partnership aims to build a complete GaN ecosystem for high power designs in India.

Read article
image

Navitas Introduces 3300 V and 2300 V UHV SiC Platform For Demanding Power Systems

Navitas adds 3300 V and 2300 V SiC devices with advanced field control and robust packaging for demanding high voltage power systems.

Read article
image

GlobalFoundries and Navitas Advance U.S. GaN Manufacturing for AI Datacenters and High-Power Systems

GlobalFoundries and Navitas form a long-term partnership to expand U.S. GaN technology and manufacturing for AI datacenters, energy and high-power systems.

Read article
image

Navitas Expands GaN and SiC Power Devices for 800 V AI Data Centres

Navitas extends its GaNFast and GeneSiC semiconductor portfolio to support NVIDIA’s 800 V AI data-centre architecture with higher efficiency and density.

Read article