Navitas Semiconductor is a global leader in next-generation wide-bandgap power devices, pioneering both GaNFast gallium-nitride and GeneSiC silicon-carbide technologies. The company’s innovations drive major improvements in efficiency, density, and reliability across markets that demand compact, energy-efficient power conversion — including AI data centres, electric vehicles, consumer electronics, industrial automation, and renewable-energy infrastructure.

GaNFast power ICs integrate GaN power switches with drive, control, and protection features in a single package to deliver ultra-fast switching and low-loss operation. GeneSiC SiC MOSFETs extend these advantages into high-voltage and high-temperature environments, offering robust performance for systems operating from 650 V to beyond 6.5 kV. Together, the two platforms allow designers to build smaller, cooler, and more efficient products while meeting stringent global energy standards.

Navitas partners with leading technology companies and research organisations to accelerate adoption of wide-bandgap power electronics. Its devices are manufactured using advanced processes, including 200 mm GaN-on-Si production in collaboration with Power Chip, enabling scalable, high-volume output. With headquarters in Torrance, California, and operations across Asia, Europe, and the US, Navitas continues to push the boundaries of sustainable power conversion, helping industries move toward a cleaner, faster, and more efficient future.