Navitas Introduces Isolated TO-247 Package for SiC MOSFETs

Navitas has introduced the UHV-TO-247-4-ISO, an isolated through-hole package developed for 1200 V, 2300 V, and 3300 V GeneSiC silicon carbide MOSFETs. The package combines integrated high-voltage isolation with a direct-cooled thermal interface, allowing devices to mount directly to liquid- or air-cooled heatsinks.

The UHV-TO-247-4-ISO is an isolated power semiconductor package designed for high-voltage SiC MOSFETs used in power conversion systems. Navitas identifies applications including grid-tied power conversion systems, solid-state transformers, battery energy storage systems, renewable energy equipment, and AI datacenter power infrastructure.

Integrated Isolation And Direct Cooling

The package incorporates an aluminum nitride (AlN) substrate that provides more than 6000 V of integrated isolation. Navitas specifies over 12 mm of pin-to-pin creepage distance and states that the package eliminates the need for external high-voltage isolation materials normally used between the semiconductor and heatsink.

A reflow-compatible isolated thermal pad allows direct attachment to liquid- or air-cooled heatsinks. The company states that this removes the need for external thermal interface materials within the thermal stack.

Thermal Performance Improvements

According to Navitas, the direct-cooled package architecture reduces junction-to-heatsink thermal resistance by as much as 60% compared to conventional approaches.

The company also reports up to 150% higher power dissipation capability. These improvements are achieved through the combination of integrated isolation and direct heatsink attachment, reducing the number of thermal interfaces between the semiconductor die and cooling system.

The package uses active metal brazing (AMB) technology on the AlN substrate and is designed for repeated power and thermal cycling in high-power applications.

Reduced EMI And Standard TO-247 Compatibility

Navitas states that the integrated isolation structure reduces die-to-heatsink stray capacitance compared to systems using external ceramic isolation materials. The company cites lower common-mode noise and reduced radiated EMI as a result.

The package retains compatibility with the established TO-247-4 footprint and lead geometry, allowing it to be used in existing designs without changing board layouts or mechanical mounting arrangements.

Available Voltage Ratings

The UHV-TO-247-4-ISO package is available across Navitas' GeneSiC MOSFET portfolio with voltage ratings of 1200 V, 2300 V, and 3300 V.

Initial devices include:

Learn more and read the original announcement at www.navitassemi.com

Technology Overview

The UHV-TO-247-4-ISO is an isolated through-hole package for 1200 V to 3300 V SiC MOSFETs. It combines an AlN-based isolation substrate rated above 6000 V with a direct-cooled thermal interface that mounts directly to liquid- or air-cooled heatsinks.

Frequently Asked Questions

What voltage ratings are available in the UHV-TO-247-4-ISO package?

The package is available for 1200 V, 2300 V, and 3300 V GeneSiC MOSFETs.

How much isolation does the package provide?

Navitas specifies integrated isolation greater than 6000 V and more than 12 mm of creepage distance.

Does the package require external thermal interface materials?

The package includes a reflow-compatible isolated thermal pad that allows direct attachment to a heatsink, eliminating the need for external TIM in the thermal stack.