GlobalFoundries and Navitas Advance U.S. GaN Manufacturing for AI Datacenters and High-Power Systems

GlobalFoundries and Navitas Semiconductor have announced a long-term partnership aimed at accelerating U.S. development and manufacturing of gallium nitride technologies. The collaboration brings together Navitas’ GaN device expertise and GF’s high-volume foundry experience to address rapidly growing demand in high-power applications. With AI datacenters, grid infrastructure, advanced computing and industrial electrification driving new efficiency targets, GaN is becoming a core material for next-generation power conversion. The agreement positions both companies to scale GaN production within the United States and strengthen supply assurance for sectors where domestic manufacturing is increasingly important.

Combining Manufacturing Depth and GaN Device Innovation

Navitas has built a significant footprint in GaN technologies through deployments in mobile charging, consumer devices, performance computing, electric vehicles and industrial systems. The company has also expanded into high-voltage SiC, but GaN remains central to its roadmap for compact and efficient power platforms. GlobalFoundries adds its manufacturing capability through the Burlington, Vermont site, which has long-standing experience with high-voltage GaN-on-silicon processes. This facility will support development efforts beginning in early 2026, with volume production projected for later in the year.

By aligning Navitas’ device engineering with GF’s established process technology, the partnership aims to accelerate commercial readiness for high-power GaN solutions suited to AI acceleration hardware, hyperscale datacenter racks, next-generation computing boards and energy infrastructure.

A Domestic Supply Pathway for Strategic Industries

Both companies emphasise the importance of building a U.S.-based GaN supply chain, especially as power electronics play a larger role in national competitiveness, energy independence and secure manufacturing. GaN devices enable high power density, faster switching and improved thermal efficiency, making them well suited to future AI compute platforms and demanding grid applications. The partnership provides a route for U.S. customers to source GaN components domestically, reducing international risk while enabling long-term scale.

Leadership from both organisations highlighted the broader impact on industry. GF CEO Tim Breen noted that GaN is reshaping how power systems are architected, calling the partnership a significant step for U.S. semiconductor capability. Navitas CEO Chris Allexandre added that accelerating GaN adoption in AI, energy and industrial markets requires both performance and secure manufacturing at scale, positioning this agreement as a critical part of Navitas’ next growth phase.

Closing Thoughts

As AI datacenters expand and energy infrastructure modernises, the need for efficient high-power technology continues to climb. Pairing Navitas’ track record in GaN device innovation with GF’s domestic manufacturing creates a pathway for U.S.-made GaN components designed for demanding applications. With development beginning in 2026, this partnership could influence how the next generation of compute and power systems are engineered.

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