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Nexperia Brings QDPAK Packaging to 1200 V SiC MOSFETs

Nexperia has introduced 1200 V SiC MOSFETs in QDPAK top-side cooled packaging. The portfolio includes 17 mΩ to 80 mΩ variants, delivers up to 3 kW higher output power than D2PAK-7 devices, and targets EV, industrial, renewable energy, and datacenter power systems.

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Toshiba Targets AI Data Center Power Stages With 1200V SiC MOSFET

Toshiba has started test-sample shipments of the TW007D120E, a 1200V trench-gate SiC MOSFET in a top-side cooled QDPAK package for AI data center power supplies and 800V HVDC architectures.

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