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Filtering by tag: "SiC MOSFET"
Clear tag filterNavitas Introduces Isolated TO-247 Package for SiC MOSFETs
Navitas has launched the UHV-TO-247-4-ISO package for 1200 V, 2300 V, and 3300 V GeneSiC MOSFETs. The package combines integrated 6000 V isolation with direct-cooled thermal management, reducing thermal resistance by up to 60% and increasing power dissipation capability by up to 150%.
Read MoreNexperia Brings QDPAK Packaging to 1200 V SiC MOSFETs
Nexperia has introduced 1200 V SiC MOSFETs in QDPAK top-side cooled packaging. The portfolio includes 17 mΩ to 80 mΩ variants, delivers up to 3 kW higher output power than D2PAK-7 devices, and targets EV, industrial, renewable energy, and datacenter power systems.
Read Moreonsemi Launches Elite Pairing Studio for SiC Power Design
onsemi has introduced Elite Pairing Studio, an online environment for evaluating SiC MOSFET and gate driver combinations. The platform provides waveform analysis, switching-loss calculations, and integration with PLECS and Elite Power Simulator workflows.
Read MoreMicrochip Targets Solid-State Transformers With 3.3 kV SiC Modules
Microchip has introduced 3.3 kV HV-D3 mSiC power modules for solid-state transformers, combining SiC MOSFETs, Schottky diodes, and high-voltage isolation for AI data centers and medium-voltage power systems.
Read MoreToshiba Targets AI Data Center Power Stages With 1200V SiC MOSFET
Toshiba has started test-sample shipments of the TW007D120E, a 1200V trench-gate SiC MOSFET in a top-side cooled QDPAK package for AI data center power supplies and 800V HVDC architectures.
Read MoreInfineon Expands XHP 2 CoolSiC Modules For 1500V Systems
Infineon has expanded its XHP 2 CoolSiC portfolio with new 2300V SiC MOSFET modules for 1500V DC-link wind, photovoltaic, and battery storage power converters.
Read MoreLittelfuse TVS Diodes Protect Automotive HV Rails
Littelfuse TPSMC, TPSMD, and TP5.0SMDJ automotive TVS diodes add high-voltage transient protection for EV BDUs, HVAC systems, PTC heaters, GaN/SiC MOSFETs, and IGBTs.
Read MoreROHM 5th Gen SiC MOSFETs Reduce High-Temp Losses
ROHM has introduced 5th Generation EcoSiC MOSFETs for EV and industrial power systems, claiming about 30% lower ON resistance at 175°C than its 4th Generation devices, with discrete and module samples scheduled from July 2026.
Read MoreSemiQ Dual3 SiC Modules Push IGBT Drop-In Further
SemiQ’s 1200 V QSiC Dual3 half-bridge modules combine low RDSon SiC MOSFETs, optional Schottky diodes, and high power density to help replace IGBT modules in data center cooling, energy storage, and industrial power converters.
Read MoreNavitas GeneSiC SiC MOSFETs Add QDPAK and Low-Profile TO-247
Navitas expands its 5th-generation GeneSiC silicon carbide MOSFET portfolio with top-side cooled QDPAK and low-profile TO-247-4L packages designed for AI data centers, grid infrastructure, and industrial power systems operating at 1200 V.
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