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Navitas Introduces Isolated TO-247 Package for SiC MOSFETs

Navitas has launched the UHV-TO-247-4-ISO package for 1200 V, 2300 V, and 3300 V GeneSiC MOSFETs. The package combines integrated 6000 V isolation with direct-cooled thermal management, reducing thermal resistance by up to 60% and increasing power dissipation capability by up to 150%.

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Navitas, GeneSiC, SiC MOSFET, Silicon Carbide, TO-247, UHV-TO-247-4-ISO, Power Electronics, Battery Energy Storage, Solid State Transformer, Renewable Energy, Power Conversion System, Thermal Management, High Voltage Isolation, AI Datacenter Power, AMB Substrate, Aluminum Nitride
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