ROHM SiC MOSFETs Power Toyota’s New bZ5 BEV in Chinese Market

ROHM Semiconductor’s fourth-generation SiC MOSFET technology is now being deployed in the mass-produced traction inverter of Toyota’s new all-electric crossover, the bZ5, developed specifically for the Chinese market. The integration marks a major milestone in the rollout of ROHM’s high-efficiency SiC power devices at scale. Developed in collaboration with BYD TOYOTA EV TECHNOLOGY (BTET) and FAW Toyota, the bZ5 began launching in June 2025 under FAW Toyota. It targets the Chinese EV segment with a range of 550 km on the base model and up to 630 km (CLTC) on higher trims. Styling and features are designed to appeal to younger buyers, particularly Generation Z, offering a sleek exterior and connected, personalised interior space. The traction inverter at the heart of the bZ5 uses a power module built around ROHM’s SiC MOSFET bare chips, manufactured and supplied in volume by HAIMOSIC (SHANGHAI) Co., Ltd., a joint venture between ROHM and the Zhenghai Group. These advanced modules help boost drive system efficiency, enabling extended range and improved overall system performance. HAIMOSIC is focused on the research, design, and manufacturing of silicon carbide power modules. Its Shanghai facility is capable of producing up to 360,000 modules annually and represents a strategic investment of 450 million RMB. The joint venture combines ROHM’s SiC expertise with Zhenghai’s local infrastructure and market access positioning HAIMOSIC as a critical player in the electric mobility supply chain. This deployment supports ROHM’s wider strategy to accelerate the commercialisation of next-generation SiC technologies. The company expects to complete production lines for fifth-generation SiC MOSFETs by the end of 2025, with sixth and seventh generations already in development.