Vishay Adds Gen 3 SiC Schottky Diodes in SlimSMA Package for Power Efficiency

Vishay Intertechnology has introduced a new series of 650 V and 1200 V silicon carbide (SiC) Schottky diodes in a low-profile SlimSMA HV (DO-221AC) package. The new Gen 3 devices VS-3C01EJ12-M3, VS-3C02EJ07-M3, and VS-3C02EJ12-M3 combine fast switching performance with enhanced electrical insulation and thermal stability, making them well-suited for compact, high-frequency power applications.

Designed with a merged PIN Schottky (MPS) structure, the new diodes offer improved switching efficiency by maintaining low capacitive charge, down to just 7.2 nC, regardless of operating temperature. This design minimises power losses and allows for faster switching speeds compared to conventional silicon diodes. With virtually no reverse recovery tail, the devices are engineered for high-speed, hard-switching topologies.

Compact Form Factor, Improved Isolation

Housed in Vishay’s SlimSMA HV package, each diode provides a minimum creepage distance of 3.2 mm and is constructed using a high CTI (Comparative Tracking Index ≥ 600) molding compound. This combination delivers excellent insulation for high-voltage designs. The package is also just 0.95 mm tall, significantly thinner than standard SMA or SMB packages, which typically measure 2.3 mm.

The result is a diode that not only improves efficiency but also helps designers meet insulation requirements in space-constrained environments, an increasingly common challenge in modern power supplies and industrial systems.

Technical Highlights

VS-3C01EJ12-M3

• Voltage: 1200 V
• Current: 1 A
• QC (nC): 7.5
• Forward Voltage: 1.35 V

Designed for high-voltage, low-current applications where creepage and size are critical.

VS-3C02EJ07-M3

• Voltage: 650 V
• Current: 2 A
• QC(nC): 7.2
• Forward Voltage: 1.30 V

Ideal for high-frequency switching in mid-voltage DC/DC and AC/DC converter stages.

VS-3C02EJ12-M3

• Voltage: 1200 V
• Current: 2 A
• QC(nC): 13 nC
• Forward Voltage: 1.35 V

Balances high voltage capability with current headroom, suited for harsh, high-power environments.

Application Areas

With operating temperatures up to +175 °C, these diodes are suitable for use as bootstrap, anti-parallel, and PFC diodes across a wide range of applications:

• Server power supplies
• Energy storage and generation systems
• Industrial motor drives and power tools
• X-ray generators and other high-voltage imaging systems

Thanks to their positive temperature coefficient, these devices are also easy to parallel, offering additional flexibility for high-current designs.

All three models are RoHS-compliant, halogen-free, and meet industry reliability standards, including Moisture Sensitivity Level 1 and JESD 201 Class 2 whisker testing. Samples and production quantities are available now, with a typical lead time of 14 weeks.

Read the original announcement here.

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