iDEAL Semiconductor Expands SuperQ MOSFETs to 200 V

iDEAL Semiconductor has expanded its SuperQ™ technology into the 200-volt range, bringing new MOSFETs aimed at efficiency-sensitive power designs. The first part is already in production, with several others moving through sampling.

Devices and Specs

The first to ship is the iS20M028S1P, a 25 mΩ MOSFET in a TO-220 package. Four more devices are being sampled. Among them are TOLL and D²PAK-7L versions that achieve an RDS(on) of 5.5 mΩ. That figure puts the devices near the top of what’s been seen from silicon in this class.

SuperQ is designed to improve both conduction and switching losses. Lower resistance cuts heat, and in turn can simplify thermal management. The parts are also specified for continuous operation up to 175 °C, giving engineers some extra margin in demanding environments.

Technology Context

Wide-bandgap devices such as GaN and SiC often dominate the conversation on efficiency, especially above 600 V. But at 200 V, silicon still has room to evolve. iDEAL’s pitch is that SuperQ closes part of the performance gap while keeping the known advantages of silicon: cost, volume manufacturing, and long-proven reliability.

Application Targets

The company is highlighting several end markets where these parts are expected to fit:

• Motor drives
• LED lighting
• Battery protection
• AI servers
• Isolated DC/DC power
• USB-PD adapters
• Solar

These are all areas where even small gains in conduction loss or switching efficiency can translate into meaningful improvements in system design, whether that’s reduced board space, better thermal headroom, or improved energy use.

Perspective

The release of a 200 V SuperQ family reinforces the idea that silicon MOSFETs are not standing still. By focusing on lower resistance and reliable operation at higher temperatures, iDEAL is offering engineers another option before they look at wide-bandgap alternatives.

Learn more and read the original article on www.idealsemi.com