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SK hynix Completes HBM4 Development and Prepares for Mass Production

SK hynix has completed HBM4 development, doubling bandwidth and improving power efficiency by 40% to support growing AI workloads.

Uploaded image SK hynix has finished developing its next-generation HBM4 memory and says its production lines are now ready. This positions the company as the first supplier prepared to mass-produce HBM4, a crucial step for meeting the rapidly growing demands of AI and high-performance computing. Performance Gains for AI Systems

The company reports that HBM4 doubles memory bandwidth by using 2,048 I/O terminals, twice as many as in the previous generation, and improves power efficiency by over 40 percent. SK hynix expects that when this memory is used in AI servers, overall service performance could rise by as much as 69 percent. Faster data transfer and lower energy use together promise to ease data bottlenecks and reduce data center power costs.

“Completion of HBM4 development will be a new milestone for the industry,” said Joohwan Cho, Head of HBM Development at SK hynix. “By supplying the product that meets customer needs in performance, power efficiency and reliability in a timely manner, the company will fulfill time to market and maintain a competitive position.”

Built for the AI Era

The surge in AI training and inference workloads has put pressure on memory subsystems. Bandwidth and energy efficiency are now among the top considerations for hyperscale operators. SK hynix believes HBM4 delivers on both fronts, making it a strong candidate for next-generation AI accelerators and HPC systems.

Technical Highlights

HBM4 uses the company’s Advanced MR-MUF (Mass Reflow Molded Underfill) process, which improves thermal performance and reduces mechanical stress on the stacked chips. This approach helps achieve better warpage control and more reliable mass production. The device also uses SK hynix’s fifth-generation 10-nanometer-class node (1bnm) to minimise defects and improve manufacturing stability.

Crucially, the memory surpasses the JEDEC standard speed of 8Gbps, running at more than 10Gbps, which sets a new bar for high-performance DRAM.

Looking Ahead

Justin Kim, President and Head of AI Infra at SK hynix, called HBM4 “a symbolic turning point beyond the AI infrastructure limitations” and said it would be a key technology for overcoming industry challenges.

By being first to prepare for HBM4 mass production, SK hynix is strengthening its competitive position and giving AI hardware developers a faster, more efficient memory option as demand ramps up in 2026 and beyond.

Learn more and read the original article on www.skhynix.com

About the author

SK Hynix

SK hynix is a global leader in advanced semiconductor solutions, specialising in DRAM, NAND flash, and CMOS image sensors that power modern computing, mobile, and AI applications. Headquartered in South Korea, the company supplies memory technologies to leading global technology brands, driving innovation in data-driven industries worldwide.

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