SemiQ Expands 1200 V Gen3 SiC MOSFET Line with New SOT-227 Modules

Silicon carbide continues to reshape power electronics, especially in systems where switching efficiency and thermal performance determine overall system cost.

SemiQ has expanded its 1200 V Gen3 SiC MOSFET family with a new set of SOT-227 power modules aimed at medium-voltage, high-power applications such as EV chargers, photovoltaic inverters and energy storage systems. The additions introduce RDS(on) values of 7.4, 14.5 and 34 mΩ, giving designers more flexibility when balancing conduction losses, current handling and switching behaviour.

Focus on Switching Losses and High-Temperature Behaviour

SemiQ offers each module in two variants: GCMX types without Schottky diodes and GCMS versions with integrated SiC Schottky Barrier Diodes. The SBD-equipped modules show noticeably lower switching losses at elevated temperatures, which is particularly useful for systems exposed to outdoor or tightly enclosed environments.

All devices undergo wafer-level gate-oxide burn-in at voltages above 1400 V and avalanche testing up to 800 mJ, depending on the device. This gives the modules additional margin for transient events, an important factor in grid-tied systems and bidirectional charging architectures. Thermal resistance sits between 0.23°C/W for the 7.4 mΩ module and 0.70°C/W for the 34 mΩ device, which helps maintain junction temperatures under fast-switching conditions.

Module Construction for High-Power Platforms

The SOT-227 format keeps the mechanical design straightforward. Each module includes an isolated backplate and direct mounting points for heat sinks, making them suitable for high-density layouts where thermal paths need to be controlled precisely. The flagship 7.4 mΩ GCMX007C120S1-E1 reaches switching losses of 4.66 mJ at typical conditions, with 3.72 mJ turn-on energy and 0.94 mJ turn-off energy. Its reverse-recovery charge of 593 nC reflects the lower stored charge typical of SiC devices, which contributes to cleaner switching in high-frequency converters.

Where the New Devices Fit

Battery charging infrastructure, solar inverters, UPS systems and industrial power supplies increasingly rely on wide-bandgap devices to manage efficiency at higher switching speeds. SemiQ’s latest modules extend the company’s 1200 V portfolio into lower-resistance territory, giving engineers more headroom when designing converters that need to maintain performance under demanding thermal and electrical conditions.

Learn more and read the original announcement at www.semiq.com