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Toshiba 600 V Super Junction MOSFET Targets High-Density Power Systems

Toshiba’s TK057V60Z brings lower loss and a compact DFN8×8 package to 600 V power supplies used in data centres, UPS systems and solar equipment.

Uploaded image Designers of industrial power supplies are under pressure to raise efficiency while shrinking system size, particularly in data centre and photovoltaic hardware where thermal limits and board area leave little room for compromise. Super junction MOSFETs continue to play a key role in these designs, but the balance between switching behaviour, conduction loss and package size often determines whether a power stage meets its targets.

Toshiba’s new TK057V60Z enters this space as a 600 volt device built on the DTMOSVI process and offered in a compact DFN8×8 package aimed at high density switched mode power supplies.

Efficiency Gains Through Process and Gate Design

The device offers a typical on resistance of 0.047 ohms and a drain current capability up to 40 amps, placing it in the range used for mid to high power conversion. What stands out is the reduction in key figures of merit compared to the earlier DTMOSIV H series. Toshiba reports a 36 percent improvement in the RDS(on) multiplied by total gate charge metric and about a 52 percent reduction in the RDS(on) multiplied by gate drain charge metric. These parameters often dictate switching loss and the energy required to drive the device. In practice this can translate to cooler operation, lower driver power and a wider operating window for resonant or hard switching topologies found in server or UPS power stages.

Package Format and Layout Considerations

The move to a DFN8×8 package gives engineers a way to increase power density without shifting to larger multi lead formats. A Kelvin source pin is included to improve gate control by isolating the gate return path from the main source connection, helping reduce the influence of parasitic inductance during high speed transitions. For high frequency supplies, especially those used in photovoltaic inverters or compact rack systems, this separation can support cleaner switching edges and more predictable behaviour under dynamic loads. The small package size also helps reduce loop area, which can improve EMI performance when paired with appropriate layout.

Practical Use Cases in Power Conversion

The TK057V60Z targets switched mode power supplies used in data centres, UPS units and solar power conditioning where efficiency gains are cumulative and directly influence operational cost. The combination of reduced loss metrics and a compact footprint aligns with designs migrating toward higher switching frequencies to reduce magnetics size. Toshiba supports the part with both G0 and G2 SPICE models, allowing engineers to check basic functionality quickly and then refine simulations with models that track transient response more closely.

Learn more and read the original announcement at www.toshiba.com

About the author

Toshiba

Toshiba Electronics Europe GmbH is the European electronic components business of Toshiba Electronic Devices and Storage Corporation. The company offers a broad portfolio of innovative semiconductor and storage solutions, including power devices, logic ICs, optoelectronics, and custom SoCs. Toshiba is committed to advancing energy efficiency, miniaturisation, and high-reliability technologies that power everything from industrial automation to next-generation communications infrastructure.

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