Nexperia Brings QDPAK Packaging to 1200 V SiC MOSFETs

Nexperia has introduced 1200 V silicon carbide (SiC) MOSFETs in its QDPAK package, bringing top-side cooling to the company's high-voltage wide-bandgap portfolio. Available in industrial and automotive-qualified versions, the portfolio includes devices with RDS(on) values of 17 mΩ, 30 mΩ, 40 mΩ, 60 mΩ, and 80 mΩ.

The new QDPAK devices are 1200 V SiC MOSFETs used in EV onboard chargers, high-voltage DC-DC converters, photovoltaic inverters, motor drives, UPS systems, EV charging infrastructure, and datacenter power supplies.

Top-Side Cooled QDPAK Package

The new portfolio brings Nexperia's QDPAK package to its SiC MOSFET range. Unlike conventional bottom-cooled packages that rely heavily on the PCB to spread heat, QDPAK provides a direct thermal path from the die to a heatsink mounted on the top side of the package.

According to Nexperia, this approach allows the semiconductor and PCB thermal domains to be managed more independently. The package builds on the company's existing X.PAK platform while extending power handling capability for higher power applications.

Thermal Performance Compared To D2PAK-7

Nexperia states that QDPAK devices can deliver up to 3 kW higher output power than conventional D2PAK-7 packaged devices operating at comparable thermal limits.

The company also cites approximately 40°C additional thermal headroom at the same power level. Compared to equivalent devices in X.PAK packaging, QDPAK can operate at around 3 kW higher power while providing approximately 23°C additional thermal headroom at similar power levels.

These figures position the package for applications where thermal management is a significant design consideration alongside electrical performance.

RDS(on) Options And Switching Characteristics

The QDPAK portfolio is available with RDS(on) values ranging from 17 mΩ to 80 mΩ, providing multiple options across different power levels and application requirements.

Nexperia also highlights RDS(on) temperature stability, low-inductance package construction, and controlled switching behavior. The devices incorporate a Kelvin source pin, which separates gate-drive and power-current return paths.

The company states that the Kelvin source connection supports switching control while helping manage ringing, electromagnetic interference (EMI), and switching transients.

Learn more and read the original announcement at www.nexperia.com

Technology Overview

Nexperia's new portfolio combines 1200 V SiC MOSFETs with the company's QDPAK top-side cooled surface-mount package. Devices are available with RDS(on) values from 17 mΩ to 80 mΩ and include a Kelvin source connection, low-inductance package construction, and a direct die-to-heatsink thermal path.

Frequently Asked Questions

What voltage rating do the new Nexperia SiC MOSFETs support?

The devices are rated for operation up to 1200 V.

What RDS(on) options are available?

The portfolio is available in 17 mΩ, 30 mΩ, 40 mΩ, 60 mΩ, and 80 mΩ variants.

Which applications does Nexperia identify for these devices?

Target applications include EV onboard chargers, DC-DC converters, EV charging infrastructure, photovoltaic inverters, UPS systems, motor drives, and datacenter power supplies.