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Toshiba Adds Complementary Dual MOSFET For Motor Control And Load Switching

Toshiba has introduced the SSM6L826R, a 30 V complementary dual MOSFET that combines N-channel and P-channel devices in a TSOP6F package for motor control and load-switching applications in consumer and industrial equipment.

Uploaded image Toshiba Electronics Europe has introduced the SSM6L826R, a 30 V dual MOSFET that combines N-channel and P-channel devices in a single TSOP6F package. The device is aimed at motor control and load-switching applications in consumer and industrial equipment, where complementary MOSFET configurations are commonly used for switching and power management functions.

The SSM6L826R is a complementary dual MOSFET used in BLDC motor drives, brushed DC motor controllers, and power supply load switches. It combines Toshiba's UMOSVIIH process technology for the N-channel device with the company's UMOSVI process technology for the P-channel device.

One of the defining characteristics of the device is the close matching between the two MOSFETs. Toshiba gives the N-channel device a maximum RDS(ON) of 46 mΩ at VGS = 10 V. The P-channel device is listed at 45 mΩ at VGS = -10 V, which keeps the two sides of the pair closely matched.

Matched MOSFET Characteristics In A Single Package

The SSM6L826R puts the N-channel and P-channel devices in the same package rather than treating them as two separate MOSFET selections. That is useful in small motor-control and load-switching circuits where the same board area may already be tight.

Toshiba states that the similar RDS(ON) values help maintain balanced conduction losses between the two devices.

The device is housed in a TSOP6F package measuring 2.9 mm × 2.8 mm × 0.8 mm and uses flat leads intended to support mounting performance during assembly.

Designed For Motor Drive Circuits

Toshiba lists single-phase brushless DC motor control among the primary applications for the SSM6L826R. Single-phase BLDC motors are widely used in compact fans, pumps, actuators, and other low-power motion-control systems. Brushed DC motor control circuits are also identified as a target application.

In both cases, the switching stage often forms a significant part of the overall control circuitry, making component count and package size important design considerations. The device is also intended for load-switching applications used on power supply rails in consumer and industrial equipment.

Expansion Of The TSOP6F Portfolio

The SSM6L826R sits alongside Toshiba's other TSOP6F dual MOSFETs. The range now includes three dual N-channel devices, one dual P-channel device, and two complementary N-channel plus P-channel devices. That gives the TSOP6F lineup a broader spread of switching options without moving away from the same package family.

Download the SSM6L826R datasheet.

Learn more and read the original announcement at www.toshiba.semicon-storage.com


Technology Overview

The Toshiba SSM6L826R is a 30 V complementary dual MOSFET that integrates one N-channel MOSFET and one P-channel MOSFET in a TSOP6F package measuring 2.9 mm × 2.8 mm × 0.8 mm. The device is specified with maximum RDS(ON) values of 46 mΩ and 45 mΩ respectively.

Frequently Asked Questions

What is the Toshiba SSM6L826R used for?

The SSM6L826R is intended for single-phase BLDC motor control, brushed DC motor control, and load-switching applications.

What voltage rating does the SSM6L826R support?

The device is rated for operation up to 30 V.

What package is used for the SSM6L826R?

The MOSFET is supplied in a TSOP6F package measuring 2.9 mm × 2.8 mm × 0.8 mm.

About the author

Toshiba

Toshiba Electronics Europe GmbH is the European electronic components business of Toshiba Electronic Devices and Storage Corporation. The company offers a broad portfolio of innovative semiconductor and storage solutions, including power devices, logic ICs, optoelectronics, and custom SoCs. Toshiba is committed to advancing energy efficiency, miniaturisation, and high-reliability technologies that power everything from industrial automation to next-generation communications infrastructure.

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