Diotec Introduces 750 V SiC MOSFET for 400 V eFuse Applications

Diotec has expanded its silicon carbide portfolio with the introduction of the DI075SIC055D7, a 750 V SiC MOSFET aimed at 400 V eFuse applications. The device combines a maximum RDS(on) of 55 mΩ with a D2PAK-7L package and is designed for high-voltage power systems where low conduction losses and fast switching are required.

The company says the MOSFET provides additional voltage margin for 400 V DC bus systems, helping it withstand voltage transients and switching events that can occur during normal operation and fault conditions.

750 V Rating and 55 mΩ RDS(on)

The DI075SIC055D7 has a drain-source breakdown voltage of 750 V and a maximum on-state resistance of 55 mΩ. Other features include low gate charge, low capacitance and low total switching energy.

Recommended gate voltages are 18 V for turn-on and -3 V for turn-off, while the allowable gate-source voltage range is -10 V to +22 V. Maximum drain-source leakage current is specified at 100 µA.

The MOSFET is rated for 214 W power dissipation, supports a peak drain current of up to 132 A and operates over a junction temperature range of -55°C to +175°C.

D2PAK-7L Package

The DI075SIC055D7 is supplied in an industrial D2PAK-7L package with a Kelvin source connection. According to Diotec, the surface-mount package is intended for compact high-voltage power designs while supporting automated assembly.

Diotec lists applications including EV charging systems, solar inverters, telecom power supplies, power factor correction (PFC), switched-mode power supplies (SMPS), DC-DC converters, industrial machinery, motor drives and 400 V eFuse protection circuits.

Samples of the DI075SIC055D7 are available now.

Learn more and read the original announcement at the Diotec website.

Technology Overview

The DI075SIC055D7 is a 750 V silicon carbide (SiC) MOSFET designed for high-voltage switching applications. It offers a maximum RDS(on) of 55 mΩ and is supplied in a D2PAK-7L package with a Kelvin source connection. The device is intended for 400 V eFuse designs as well as EV charging systems, solar inverters, telecom power supplies, DC-DC converters and other industrial power applications requiring efficient high-voltage switching.

Frequently Asked Questions

What is the DI075SIC055D7?

The DI075SIC055D7 is a 750 V silicon carbide (SiC) MOSFET from Diotec with a maximum RDS(on) of 55 mΩ. It is supplied in a D2PAK-7L package with a Kelvin source connection.

What applications is the MOSFET intended for?

Diotec positions the device for 400 V eFuse applications, EV charging systems, solar inverters, telecom power supplies, power factor correction (PFC), switched-mode power supplies (SMPS), DC-DC converters, industrial machinery and motor drives.

What are the key electrical specifications?

The MOSFET is rated for 750 V drain-source voltage, has a maximum RDS(on) of 55 mΩ, supports up to 132 A peak drain current and is rated for 214 W power dissipation. The operating junction temperature range is -55°C to +175°C.

What package does the device use?

The DI075SIC055D7 is supplied in an industrial D2PAK-7L surface-mount package with a Kelvin source connection.