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MCC Introduces 40 V Automotive MOSFET with 0.7 mΩ RDS(on)

MCC has introduced the MCACLD70N04YHE3-TP, a 40 V AEC-Q101 qualified N-channel MOSFET featuring a maximum RDS(on) of 0.7 mΩ, 350 A current capability and a DFN5060-C package for automotive and industrial power applications.

Uploaded image Micro Commercial Components (MCC) has introduced the MCACLD70N04YHE3-TP, a 40 V N-channel power MOSFET for automotive and high-current power applications. The AEC-Q101 qualified device combines a maximum RDS(on) of 0.7 mΩ with a continuous drain current rating of 350 A in a compact DFN5060-C package.

Built on the company's Split Gate Trench (SGT) MOSFET technology, the device is intended for applications including battery management systems, DC-DC converters, power distribution modules, motor drives and load switches.

350 A Current Rating

The MCACLD70N04YHE3-TP is rated for a continuous drain current of up to 350 A and a drain-source voltage of 40 V, making it suitable for both 12 V and 24 V automotive power architectures.

According to MCC, the device's maximum on-resistance of 0.7 mΩ at VGS = 10 V helps reduce conduction losses in high-current switching applications.

DFN5060-C Package

The MOSFET is supplied in a DFN5060-C package that supports high power density while reducing PCB area. The package also provides a junction-to-case thermal resistance of 0.4°C/W to improve heat dissipation under high load conditions. MCC says the device's Split Gate Trench (SGT) technology reduces switching losses while maintaining low on-resistance for high-frequency operation.

Automotive Applications

The MCACLD70N04YHE3-TP is AEC-Q101 qualified for automotive use and is intended for battery management systems, power management units, DC-DC converters, load switches, synchronous rectification, motor drives, industrial power supplies and other high-current power applications.

The MCACLD70N04YHE3-TP is available now through MCC and its authorized distributors.

Learn more and read the original announcement at the MCC website.


Technology Overview

The MCACLD70N04YHE3-TP is a 40 V AEC-Q101 qualified N-channel power MOSFET from MCC. It combines a maximum RDS(on) of 0.7 mΩ with a 350 A current rating in a DFN5060-C package and uses Split Gate Trench (SGT) technology to reduce conduction and switching losses in automotive and industrial power applications.

Frequently Asked Questions

What is the MCACLD70N04YHE3-TP?

The MCACLD70N04YHE3-TP is a 40 V AEC-Q101 qualified N-channel power MOSFET from MCC for automotive and high-current power applications.

What are the key specifications?

The device offers a maximum RDS(on) of 0.7 mΩ at VGS = 10 V, a continuous drain current rating of 350 A and a junction-to-case thermal resistance of 0.4°C/W.

What applications is the MOSFET intended for?

Target applications include battery management systems, DC-DC converters, power distribution modules, motor drives, load switches, synchronous rectification and industrial power supplies.

About the author

MCC

MCC (Micro Commercial Components) designs and manufactures discrete semiconductors and power devices used in automotive, industrial, consumer, and energy systems worldwide.

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