AOS Launches 600 V αMOS E2 Super Junction MOSFETs with Top-Side Cooling

Alpha and Omega Semiconductor (AOS) has introduced the AOGT037V60DE2 and AOGT060V60DE2, two 600 V Super Junction MOSFETs combining its αMOS E2 high-voltage silicon with a top-side-cooled GTPAK package.

The AOGT037V60DE2 has an on-resistance of 37 mΩ, while the AOGT060V60DE2 is rated at 60 mΩ. Both target high-voltage power conversion in servers, workstations, telecom rectifiers, solar inverters, motor drives and industrial power systems.

AOS has designed the devices for use across several common power conversion topologies, including boost PFC, the slow leg of totem-pole PFC, LLC resonant converters, phase-shifted full bridge (PSFB) and cycloconverters.

Top-Side Cooling for High-Density Power Designs

The two MOSFETs pair AOS's αMOS E2 silicon with its GTPAK package, which moves the primary thermal path to a cooling pad on the top of the device. This allows heat to be removed directly from the package rather than relying on the PCB as the main thermal path.

Separating the electrical and thermal paths gives designers more flexibility when laying out higher-density power systems. It can also reduce the PCB area that would otherwise be required for thermal management, particularly in applications where several high-power switching devices are placed close together.

The GTPAK package uses gull-wing leads, which AOS says are intended to improve board-level reliability in demanding operating environments.

Built for High-Stress Switching Conditions

Alongside the thermal design, AOS has focused on the ruggedness of the αMOS E2 platform. The MOSFETs have a body-diode di/dt capability of 1500 A/µs, along with avalanche unclamped inductive switching (UIS) capability and short-circuit withstand performance.

A built-in fast body diode reduces reverse-recovery charge, or Qrr, for switching applications where diode recovery can contribute to losses and switching stress. The devices also provide inrush current handling and a wide safe operating area.

AOS has designed the MOSFETs to resist parasitic self-turn-on during dynamic switching conditions, another consideration in high-voltage converter designs where rapid voltage transitions can unintentionally couple into the gate. The combination of the 600 V rating, switching ruggedness and top-side thermal path makes the AOGT037V60DE2 and AOGT060V60DE2 suitable for AC/DC power supplies, DC/DC converters and DC/AC inverter designs.

Both MOSFETs are now available in production quantities. The AOGT037V60DE2 is priced at $6.00 and the AOGT060V60DE2 at $3.00 in quantities of 1,000, with AOS quoting a 16-week lead time.

Learn more and read the original announcement at aosmd.com.

Technology Overview

The AOGT037V60DE2 and AOGT060V60DE2 are 600 V Super Junction MOSFETs based on AOS's αMOS E2 high-voltage platform. They combine 37 mΩ and 60 mΩ on-resistance options with top-side-cooled GTPAK packaging, a fast body diode and ruggedness features for high-voltage power conversion.

FAQs

What are the AOGT037V60DE2 and AOGT060V60DE2?

They are 600 V αMOS E2 Super Junction MOSFETs from Alpha and Omega Semiconductor with respective on-resistances of 37 mΩ and 60 mΩ.

How are the AOS GTPAK MOSFETs cooled?

The GTPAK package uses a top-side cooling pad, allowing heat to be removed from the top of the MOSFET rather than relying primarily on the PCB thermal path.

Which power topologies are the new MOSFETs designed for?

AOS lists boost PFC, totem-pole PFC slow-leg operation, LLC resonant converters, PSFB and cycloconverter applications.