Renesas Launches First 100 V E-Mode GaN FET Family

Renesas has expanded its GaN portfolio into low-voltage power conversion with its first family of 100 V enhancement-mode GaN transistors.

The new family includes four devices with RDS(on) values from 5 mΩ down to 1.2 mΩ, targeting applications including AI data centers, robotics, factory automation, industrial motor drives, power tools and solar microinverters.

For Renesas, the move into 100 V GaN comes as more power systems adopt 48 V buses and push converter stages toward higher switching frequencies. The company is positioning the new devices for synchronous rectification, multiphase buck conversion and other stages where lower switching energy can translate directly into smaller magnetics and higher power density.

Bringing GaN into Lower-Voltage Power Stages

The new devices are built on Renesas’ low-voltage E-mode GaN technology, with low total gate charge and output charge intended to reduce energy lost during each switching cycle.

Renesas also specifies zero reverse recovery, with Qrr = 0. That becomes particularly useful in power stages operating at higher switching frequencies, where reverse-recovery losses can otherwise become a larger part of the overall loss budget.

According to Renesas, the new family delivers up to 35% lower hard-switching figure of merit and up to 63% lower soft-switching figure of merit than comparable GaN devices. Depending on the converter topology and operating conditions, the company also claims switching-loss reductions of 40% to 70%.

The four devices span RDS(on) values from 5 mΩ to 1.2 mΩ, giving designers options across different current and power levels without moving outside the same 100 V GaN family.

Designed to Ease the Move from Silicon

Renesas has also kept the packaging close to existing MOSFET layouts rather than requiring a completely different board approach.

The new GaN transistors are offered in standard MOSFET-compatible footprints, allowing existing silicon designs to be migrated with less PCB rework. Bottom-side and dual-side-cooled options are available, giving designers different thermal paths depending on the power stage and board layout.

That combination of packaging and switching performance is central to how Renesas is positioning the family. The company says the devices can deliver 1% to 3% higher efficiency than silicon-based designs and, in suitable applications, support up to twice the power density at system level.

The first four devices are the RTP100E005G1FL, RTP100E2P6G1FL, RTP100E1P8G1FL-DSC and RTP100E1P2G1FL-DSC. All four are available now, along with corresponding evaluation boards.

Learn more and read the original announcement at renesas.com.

Technology Overview

Renesas’ first low-voltage GaN family includes four 100 V enhancement-mode power transistors with RDS(on) values from 5 mΩ to 1.2 mΩ. The devices are designed for high-frequency power conversion and feature low Qg and Qoss, zero reverse recovery, MOSFET-compatible footprints, and bottom-side or dual-side cooling options.

FAQs

Why has Renesas introduced 100 V GaN FETs?

Renesas is targeting lower-voltage power stages that are moving toward higher switching frequencies, including 48 V architectures used in AI data centers, robotics and industrial systems.

What switching advantages do the new GaN FETs offer?

The devices use low gate and output charge and have zero reverse recovery. Renesas says they deliver up to 35% lower hard-switching FOM and up to 63% lower soft-switching FOM than comparable GaN devices.

Can the new GaN FETs replace silicon MOSFETs in existing layouts?

Renesas offers the devices in MOSFET-compatible footprints to make migration from silicon easier, with both bottom-side and dual-side-cooled package options available.