Diodes Introduces API21550 and API21552 Dual-Channel Isolated Gate Drivers

Diodes Incorporated has introduced the API21550 and API21552, two dual-channel isolated gate drivers in its RobustISO family. The devices provide up to 4 A peak source and 6 A peak sink current for driving silicon MOSFETs, IGBTs, silicon carbide (SiC) and gallium nitride (GaN) power devices.

Designed for applications including motor drives, solar inverters, battery management systems, servers and high-voltage DC-DC converters, the new drivers offer two output configurations for different switching requirements.

Half-Bridge and Independent Gate-Drive Configurations

The API21550 provides separate high-side and low-side driving outputs with adjustable dead time. Its interlocked outputs provide shoot-through protection for isolated half-bridge driving applications.

The API21552 has two independent driving outputs that may overlap, supporting dual low-side, dual high-side and half-bridge gate driving applications.

Both devices offer 5 V, 8 V and 12 V undervoltage lockout (UVLO) options to accommodate different power switches. They operate from a 3 V to 5.5 V input-side supply, with output-side supply voltage support up to 30 V.

The drivers have a typical propagation delay of 40 ns and maximum pulse-width distortion of 7 ns. An integrated 5 ns de-glitch filter provides additional noise immunity, while other features include active pulldown and undervoltage lockout on the input and output power rails.

Isolation Performance and Package Options

The API21550 and API21552 use a silica-based capacitive isolation barrier with a breakdown voltage of up to 13 kV RMS. The devices have a minimum common-mode transient immunity (CMTI) of 150 V/ns and a predicted isolation barrier lifetime exceeding 40 years, according to Diodes.

The SO-14W and SO-16W packages provide 5,700 V RMS reinforced isolation, while the SO-16 package provides 3,000 V RMS basic isolation. All three package options are available in the RobustISO series.

Automotive-compliant API21550Q and API21552Q versions are also available. The standard devices are priced from $0.99 in 1,000-piece quantities.

Learn more and read the original announcement at diodes.com.

Technology Overview

The Diodes Incorporated API21550 and API21552 are dual-channel isolated gate drivers in the RobustISO family, offering 4 A peak source and 6 A peak sink currents. The API21550 provides interlocked high-side and low-side outputs with adjustable dead time, while the API21552 offers two independent outputs. Both support MOSFET, IGBT, SiC and GaN switching devices, with 40 ns typical propagation delay, minimum 150 V/ns CMTI and up to 5,700 V RMS reinforced isolation in wide-body packages.

FAQs

What is the difference between the API21550 and API21552?

The API21550 has interlocked high-side and low-side outputs with adjustable dead time for half-bridge applications. The API21552 provides two independent outputs that can overlap, supporting dual low-side, dual high-side and half-bridge configurations.

What output current and isolation ratings do the devices provide?

Both drivers offer up to 4 A peak source and 6 A peak sink current. The SO-14W and SO-16W packages provide 5,700 V RMS reinforced isolation, while the SO-16 package provides 3,000 V RMS basic isolation.

Which power switches and applications are supported?

The API21550 and API21552 can drive silicon MOSFETs, IGBTs, SiC and GaN devices. Applications include motor drives, solar inverters, battery management systems, uninterruptible power supplies and high-voltage DC-DC converters.