Nexperia Expands GaN FET Portfolio with On-Resistance Down to 0.32 mΩ

Nexperia has introduced new ultra-low-ohmic gallium nitride (GaN) FETs, expanding its low- and medium-voltage portfolio with devices spanning 18 V to 200 V. The new devices are designed for AI data centers, robotics, battery-powered tools, renewable energy systems and high-efficiency DC-DC conversion.

The family includes devices with sub-milliohm on-state resistance in compact PQFN packages. Low RDS(on) × QG and RDS(on) × QOSS figures of merit address conduction and switching losses in high-frequency power conversion and three-phase BLDC/PMSM motor drives.

GaN FETs for DC-DC Power Conversion

The medium-voltage 100 V to 200 V devices address primary-side and secondary-side power stages in isolated topologies, as well as non-isolated step-down converters. Applications include half-bridge and full-bridge LLC resonant converters and synchronous rectification in 48 V power-delivery architectures.

The low-voltage 18 V to 40 V devices are optimized for secondary-side synchronous rectification and low-voltage power-distribution stages, including conversion from 12 V rails down to sub-1 V processor core voltages.

In motion control applications, the combination of low RDS(on) and compact package dimensions enables high current capability within a small PCB footprint. Fast switching performance supports inverter operation, dead-time control and, where required, 100% duty-cycle operation.

Device Specifications and Availability

The flagship GANE0R8-100QTM is a 100 V GaN FET with a typical RDS(on) of 0.75 mΩ in a 3 × 5 mm PQFN package. It is available alongside five additional devices spanning 25 V to 200 V, with on-resistance values down to 0.37 mΩ.

Two further devices are scheduled for release in Q1 2027, including the 18 V GANE0R3-015QTL with a typical RDS(on) of 0.32 mΩ. These additions will complete an eight-device portfolio covering 18 V to 200 V.

The family includes 3.3 × 3.3 mm and 3 × 5 mm PQFN package options, both incorporating an exposed pad for top-side cooling.

Learn more and read the original announcement at nexperia.com.

Technology Overview

Nexperia has expanded its low- and medium-voltage GaN FET portfolio with eight devices spanning 18 V to 200 V. The devices offer low RDS(on), gate-charge and output-charge figures of merit for DC-DC power conversion, synchronous rectification and motor drives. The portfolio includes the 100 V GANE0R8-100QTM with 0.75 mΩ typical on-resistance and the upcoming 18 V GANE0R3-015QTL with 0.32 mΩ typical on-resistance. Both 3.3 × 3.3 mm and 3 × 5 mm PQFN package options support top-side cooling.

FAQs

What voltage and on-resistance options are available in Nexperia's new GaN FET portfolio?

The eight-device portfolio spans 18 V to 200 V. The GANE0R8-100QTM is rated at 100 V with a typical RDS(on) of 0.75 mΩ, while the upcoming 18 V GANE0R3-015QTL offers 0.32 mΩ typical on-resistance.

What applications are Nexperia's new GaN FETs designed for?

The devices target isolated and non-isolated DC-DC converters, synchronous rectification, 48 V power-delivery architectures and three-phase BLDC/PMSM motor drives. Applications include AI data centers, robotics, battery-powered tools and renewable energy systems.

When will the new Nexperia GaN FETs be available?

Six devices, including the 100 V GANE0R8-100QTM, are available at launch. Two further products, including the 18 V GANE0R3-015QTL, are scheduled for release in Q1 2027.